Seme 2N3019 Datasheet

Prelim.6/99

2N3019

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

NPN SILICON TRANSISTOR

FEATURES

• NPN High Voltage Planar Transistor

• Hermetic TO39 Package

• Full Screening Options Available

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage

V

EBO

Emitter – Base Voltage

I

C

Collector Current

P

D

Total Device Dissipation @ TA= 25°C

P

D

Derate above 25°C

P

D

Total Device Dissipation @ TC= 25°C

P

D

Derate above 25°C

T

j

Max Junction Temperature

T

stg

Storage Temperature

R

jc

Thermal Resistance Junction to Case

R

ja

Thermal Resistance Junction to Ambient

140V

80V

7V
1A

0.8W

4.6mW / °C
5W

28.6mW / °C
200°C

–55 to 200°C

16.5°C / W

89.5°C / W

MECHANICAL DATA

Dimensions in mm (inches)

TO39 PACKAGE

ABSOLUTE MAXIMUM RATINGS (T

case

= 25°C unless otherwise stated)

Pin 1 = Emitter

Underside View

Pin 2 = Base Pin 3 = Collector

0.89

(0.035)

max.

0.66 (0.026)

1.14 (0.045)

0.71 (0.028)

0.86 (0.034)

2.54

(0.100)

5.08 (0.200)
typ.

45˚

12.70

(0.500)

min.

4.19 (0.165)

4.95 (0.195)

8.89 (0.35)

9.40 (0.37)

7.75 (0.305)

8.51 (0.335)

7.75 (0.305)

8.51 (0.335)
dia.

123

Prelim.6/99

2N3019

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions Min. Typ. Max. Unit

Parameter Test Conditions Min. Typ. Max. Unit

ELECTRICAL CHARACTERISTICS (T

case

= 25°C unless otherwise stated)

I

C

= 30mA IB= 0
IC= 100mA IE= 0
IE= 100mA IC= 0
VCB= 90V IE= 0
VCB= 90V IE= 0
T

amb

= 150°C
VBE= 5V IC= 0
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 0.1mA VCE= 10V
IC= 10mA VCE= 10V
IC= 150mA VCE= 10V
IC= 500mA VCE= 10V
IC= 1A VCE= 10V
IC= 150mA VCE= 0.5V

V

(BR)CEO

Collector – Emitter Breakdown Voltage

V

(BR)CBO*

Collector – Base Breakdown Voltage

V

(BR)EBO*

Emitter – Base Breakdown Voltage

I

CBO

Collector Cut-off Current

I

EBO

Emitter Cut-off Current

V

CE(sat)

Collector – Emitter Saturation Voltage

V

BE(sat)

Base – Emitter Saturation Voltage

h

FE*

DC Current Gain

TC= –55°C

80

140

7

0.01
10

0.010

0.20

0.50

1.1
50
90

100 300

50
15
40

V
V
V

m

A

m

A
V
V

—

f

T

Transition Frequency

C

obo

Output Capacitance

C

ibo

Input Capacitance

h

fe

Small Signal Current Gain

rb’C

c

Collector Base Time Constant

NF Noise Figure

IC= 50mA VCE= 10V f = 20MHz
VCB= 10V IE= 0 f = 1.0MHz
VBE= 0.5V IC= 0 f = 1.0MHz

IC= 1mA VCE= 5V f = 1kHz
IE= 10mA VCB= 10V f = 79.8MHz
IC= 100mA VCE= 10V f = 1kHz

RS= 1K

W

100 400

12
60

80 400

15 400

4

MHz

pF
pF

—
ps

db

t* Pulse test tp = 300ms , d£1%

DYNAMIC CHARACTERISTICS (T

case

= 25°C unless otherwise stated)