Seme 2N2918, 2N2916, 2N2914 Datasheet

LAB

SEME

Prelim. 9/95

2N2914
2N2916
2N2918

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

DUAL NPN

PLANAR TRANSISTORS IN

TO77 PACKAGE

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage

1

V

EBO

Emitter – Base Voltage

I

C

Continuous Collector Current

P

D

Total Device Dissipation T

AMB

= 25°C

Derate above 25°C

P

D

Total Device Dissipation TC= 25°C

Derate above 25°C

T

STG

Storage Temperature Range

T

L

Lead temperature (Soldering, 10 sec.)

45V
45V

6V
30

300mW 500mW

1.72mW / °C 2.86W / °C
750mW 1.5W

4.3mW / °C 8.6mW / °C
–65 to 200°C

300°C

MECHANICAL DATA

Dimensions in mm (inches)

TO–77 PACKAGE

ABSOLUTE MAXIMUM RATINGS

(T

amb

= 25°C unless otherwise stated)

PIN 1 – Collector 1
PIN 2 – Base 1
PIN 3 – Emitter 1

PIN 4 – Emitter 2
PIN 5 – Base 2
PIN 6 – Collector 2

NOTES

1. Base – Emitter Diode Open Circuited.

EACH SIDE TOTAL DEVICE

8.51 (0.335)

9.40 (0.370)

7.75 (0.305)

8.51 (0.335)

6.10 (0.240)

6.60 (0.260)

Min.

12.7 (0 .5 00)

0.41 (0.016)

0.53 (0.021)

5.08

(0.200)

2.54

(0.100)

1.02

(0.040)

Max.

2.54

(0.100)

4

5

6

3

2

1

0.74 (0.029)

1.14 (0.045)

45˚

0.71 (0.028)

0.86 (0.034)

2N2916 2N2918

Parameter Test Conditions Min. Typ. Max. Min. Typ. Max. Unit

—

mV

mV

0.9 1

3

5

0.8

1

0.8 1

5

10

1.6

2

V

CE

= 5V IC= 100mA

See Note 2.

V

CE

= 5V IC= 100mA

V

CE

= 5V IC= 10mA to 1mA

VCE= 5V IC= 100mA

T

A1

= 25°C TA2= –55°C

V

CE

= 5V IC= 100mA

T

A1

= 25°C TA2= 125°C

TRANSISTOR MATCHING CHARACTERISTICS

LAB

SEME

Prelim. 9/95

2N2914
2N2916
2N2918

Semelab plc. Telephone [phone]. Fax [phone].

E-mail: [e-mail]

Website: http://www.semelab.co.uk

Parameter Test Conditions

1

Min. Typ. Max. Unit

V

nA

m

A

nA

—

V

W

m

mho

—

pF

45

45

6

10

10

2

2

150 600

30

225

300

0.70

0.35

25 32

1

3

6

V

(BR)CBO

Collector – Base Breakdown Voltage

V

(BR)CEO*

Collector – Emitter Breakdown Voltage

V

(BR)EBO

Emitter – Base Breakdown Voltage

I

CBO

Collector Cut-off Current

I

CEO

Collector Cut-off Current

I

EBO

Emitter Cut-off Current

h

FE

DC Current Gain

V

BE

Base – Emitter Voltage

V

CE(sat)

Collector – Emitter Saturation Voltage

h

ib

Small Signal Common – Base

Input Impedance

h

ob

Small Signal Common – Base

Output Admittance

|hfe| Small Signal Common – Base

Current Gain

C

obo

Common – Base Open Circuit

Output Capacitance

IC= 10mAIE= 0

IC= 10mA IB= 0

IE= 10mAIC= 0

VCB= 45V IE= 0

TA= 150°C

VCE= 5V IB= 0

VEB= 5V IC= 0

VCE= 5V IC= 10mA

TA= –55°C

VCE= 5V IC= 100mA

VCE= 5V IC= 1mA

VCE= 5V IC= 100mA

IB= 100mAIC= 1mA

VCB= 5V IC= 1mA

f = 1kHz

VCB= 5V IC= 1mA

f = 1kHz

VCE= 5V IC= 500mA

f = 20MHz

VCB= 5V IE= 0

f = 140kHz to 1MHz

ELECTRICAL CHARACTERISTICS (T

amb

= 25°C unless otherwise stated)

INDIVIDUAL TRANSISTOR CHARACTERISTICS

* Pulse Test: tp= 300ms , d£1%.

NOTES

1) Terminals not under test are open circuited under all test conditions.

2) The lower of the two readings is taken as h

FE1

.

h

FE1

h

FE2

|V

BE1

– V

BE2

|

|D(V

BE1

– V

BE2

)DTA|

Static Forward Current

Gain Balance Ratio

Base – Emitter Voltage

Differential

Base – Emitter Voltage

Differential Change With

Temperature