Seme 2N2907ADCSM Datasheet
LAB
SEME
Prelim. 3/00
2N2907ADCSM
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
DU AL HIGH SPEED , MEDIUM PO WER
PNP SWITCHING TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• DUAL SILICON PLANAR EPITAXIAL
PNP TRANSISTORS
• HERMETIC CERAMIC SURFACE
MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
Hermetically sealed dual surface mount
version of the popular 2N2907A for high
reliability / space applications requiring
small size and low weight devices.
PER SIDE
V
CBO
Collector - Base Voltage
V
CEO
Collector - Emitter Voltage
V
EBO
Emitter - Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation
P
D
Derate above 50°C
TOTAL DEVICE
R
q
JA
Thermal Resistance Junction to Ambient
R
q
JC
Thermal Resistance Junction to Case
T
STG,Tj
Storage Temperature, Operating temp range
–60V
–60V
–5V
600mA
350mW
2.0mW / °C
130°C / W
60°C / W
–55 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
LCC2 PACKAGE
Underside View
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise stated)
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
A
2
1
3
4
56
6.22 ± 0.13
(0.245 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
1.65 ± 0.13
(0.065 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
1.27 ± 0.13
(0.05 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
4.32 ± 0.13
(0.170 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
0.23
(0.009)
rad.
A =
Parameter Test Conditions Min. Typ. Max. Unit
LAB
SEME
Prelim. 3/00
2N2907ADCSM
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
VCC= 30V
IC= 150mA
IB1= 15mA
VCC= 6V
IC= 150mA
IB1= IB2= 15mA
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS PER SIDE (T
C
= 25°C unless otherwise stated)
IC= 10mA
IC= 10mA
IE= 10mAIC= 0
VCE= 30V VBE= 0.5V
IE= 0 VCB= 50V
TC= 125°C
VCE= 30V VBE= 0.5V
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 0.1mA VCE= 10V
IC= 1mA VCE= 10V
IC= 10mA VCE= 10V
IC= 150mA VCE= 10V
IC= 500mA VCE= 10V
V
CEO(sus)*
Collector – Emitter Sustaining Voltage
V
(BR)CBO*
Collector – Base Breakdown Voltage
V
(BR)EBO*
Emitter – Base Breakdown Voltage
I
CEX*
Collector Cut-off Current
I
CBO*
Collector – Base Cut-off Current
I
BEO
Base Cut-off Current
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
–60
–60
–5
50
0.01
10
50
–0.4
–1.6
–1.3
–2.6
75
100
100
100 300
50
V
V
V
nA
m
A
nA
V
V
—
f
T
Transition Frequency
C
ob
Output Capacitance
C
ib
Input Capacitance
IC= 50mA VCE= 20V f = 100MHz
VCB= 10V IE= 0 f = 1.0MHz
VBE= 2V IC= 0 f = 1.0MHz
200
8
30
MHz
pF
pF
t
on
Turn-on Time
t
d
Delay Time
t
r
Rise Time
t
off
Turn-off Time
t
s
Storage Time
t
f
Fall Time
26 45
6.0 10
20 40
70 100
50 80
20 30
ns
ns
SWITCHING CHARACTERISTICS PER SIDE (RESISTIVE LOAD)
(TC= 25°C unless otherwise stated)
* Pulse test tp = 300ms ,
d £
2%
DYNAMIC CHARACTERISTICS PER SIDE (T
C
= 25°C unless otherwise stated)
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