Seme 2N2907A Datasheet
LAB
SEME
2N2907A
Prelim. 4/96
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
HIGH SPEED
MEDIUM PO WER
PNP SWITCHING TRANSIST OR
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• HIGH SPEED SATURATED SWITCHING
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
V
CBO
Collector - Base Voltage
V
CEO
Collector - Emitter Voltage
V
EBO
Emitter - Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ TA= 25°C
Derate above 25°C
P
D
Total Device Dissipation @ TC= 25°C
Derate above 25°C
TJ, T
STG
Operating and Storage Junction Temperature Range
–60V
–60V
–5V
600mA
400mW
2.28mW / °C
1.8W
10.3mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO–18 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base PIN 3 – Collector
13
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.33 (0.210)
4.32 (0.170)
12.7 (0.500)
min.
Parameter Test Conditions Min. Typ. Max. Unit
LAB
SEME
2N2907A
Prelim. 4/96
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
IC= 10mA IB= 0
IC= 10mAIE= 0
IE= 10mAIC= 0
VCE= 30V VBE= 0.5V
IE= 0 VCB= 50V
TA= 150°C
VCE= 60V VBE= 0.5V
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
1
IC= 500mA IC= 50mA
IC= 0.1mA VCE= 10V
IC= 1mA VCE= 10V
IC= 10mA VCE= 10V
IC= 150mA VCE= 10V
1
IC= 500mA VCE= 10V
1
IC= 50mA VCE= 20V
f = 100MHz
V
CB
= 10V IE= 0
f = 100kHz
VBE= 2V IC= 0
f = 100kHz
VCC= 30V
IC= 150mA
I
B1
= 15mA
V
CC
= 6V
IC= 150mA
I
B1
= IB2= 15mA
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
V
(BR)CEO
1
Collector – Emitter Breakdown Voltage
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)EBO
Emitter – Base Breakdown Voltage
I
CEX
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
B
Base Current
V
CE(sat)
1
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE
DC Current Gain
f
T
Transition Frequency
2
C
ob
Output Capacitance
C
ib
Input Capacitance
t
on
Turn–On Time
t
d
Delay Time
t
r
Rise Time
t
off
Turn–Off Time
t
s
Storage Time
t
f
Fall Time
60
60
5
50
0.01
10
50
0.4
1.6
0.6 1.3
2.6
75
100
100
100 300
50
200
8
30
26 45
610
20 40
70 100
50 80
20 30
V
V
V
nA
m
A
nA
V
V
—
MHz
pF
pF
ns
ns
NOTES:
1) Pulse test: tp£
300ms ,
d £
2%
2) fTis defined as the frequency at which hFEextrapolates to unity.
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
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