Seme 2N2905A Datasheet
LAB
SEME
2N2905A
Prelim. 6/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
HIGH SPEED
MEDIUM PO WER
PNP SWITCHING TRANSIST OR
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• HIGH SPEED SATURATED SWITCHING
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
V
CBO
Collector - Base Voltage
V
CEO
Collector - Emitter Voltage
V
EBO
Emitter - Base Voltage
I
C
Collector Current Continuous
P
D
Total Device Dissipation @ TA= 25°C
Derate above 25°C
P
D
Total Device Dissipation @ TC= 25°C
Derate above 25°C
TJ, T
STG
Operating and Storage Junction Temperature Range
–60V
–60V
–5V
600mA
600mW
3.43mW / °C
3W
17.2mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PIN 1 – Emitter
Underside View
PIN 2 – Base PIN 3 – Collector
0.89
(0.035)
max.
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
5.08 (0.200)
typ.
45˚
12.70
(0.500)
min.
4.19 (0.165)
4.95 (0.195)
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
7.75 (0.305)
8.51 (0.335)
dia.
1
2
3
R
q
JA
Thermal Resistance, Junction to Ambient 292°C/W
R
q
JC
Thermal Resistance, Junction to Case 58°C/w
THERMAL CHARACTERISTICS
NOTES:
1) Pulse test: tp£
300ms , d£2%
2) fTis defined as the frequency at which hFEextrapolates to unity.
Parameter Test Conditions Min. Typ. Max. Unit
LAB
SEME
2N2905A
Prelim. 6/99
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
IC= –10mA IB= 0
IC= –10mA IE= 0
IE= –10mA IC= 0
VCE= –30V VBE= –0.5V
IE= 0 VCB= –50V
TA= 150°C
VCE= –30V VBE= –0.5V
IC= –150mA IB= –15mA
IC= –500mA IB= –50mA
IC= –150mA IB= –15mA
IC= –500mA IC= –50mA
IC= –0.1mA VCE= –10V
IC= –1mA VCE= –10V
IC= –10mA VCE= –10V
IC= –150mA VCE= –10V
1
IC= –500mA VCE= –10V
1
IC= –50mA VCE= –20V
f = 100MHz
VCB= –10V IE= 0
f = 1.0MHz
VBE= –2V IC= 0
f = 1.0MHz
VCC= –30V
IC= –150mA
IB1= –15mA
VCC= –6V
IC= –150mA
IB1= IB2= –15mA
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
V
(BR)CEO
1
Collector – Emitter Breakdown Voltage
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)EBO
Emitter – Base Breakdown Voltage
I
CEX
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
B
Base Current
V
CE(sat)
1
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE
DC Current Gain
f
T
Transition Frequency
2
C
ob
Output Capacitance
C
ib
Input Capacitance
t
on
Turn–On Time
t
d
Delay Time
t
r
Rise Time
t
off
Turn–Off Time
t
s
Storage Time
t
f
Fall Time
–60
–60
–5
–50
–0.01
–10
–50
–0.4
–1.6
–1.3
–2.6
75
100
100
100 300
50
200
8
30
26 45
6 10
20 40
70 100
50 80
20 30
V
V
V
nA
m
A
nA
V
V
—
MHz
pF
pF
ns
ns
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
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