Seme 2N2904 Datasheet
MECHANICAL DATA
Dimensions in mm (inches)
2N2904
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
0.89
max.
(0.035)
12.70
(0.500)
min.
7.75 (0.305)
8.51 (0.335)
dia.
5.08 (0.200)
ty p .
2.54
(0.100)
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
123
45°
TO–39 METAL PACKAGE
GENERAL PURPOSE PNP
TRANSIST OR
FEATURES
• SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
• CECC SCREENING OPTIONS
• LOW NOISE AMPLIFIER
APPLICATIONS:
• GENERAL PURPOSE
• HIGH SPEED SATURATED SWITCHING
Underside View
PIN 1 – Emitter
PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
TJ, T
STG
Collector – Emitter Voltage
Collector – Base Voltage
Emmiter – Base Voltage
Collector Current – Continuous
Total Device Dissipation @ TA= 25°C
Derate above 25°C
Total Device Dissipation @ TC= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
= 25°C unless otherwise stated)
case
40V
60V
5V
600mA
600mW
3.43mW/ °C
3W
17.2mW / °C
–65 to +200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
2N2904
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
I
B
h
FE
V
CE(sat)
V
BE(sat)
f
t
C
obo
C
ibo
t
on
t
d
t
r
t
off
t
s
t
f
Collector–Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Base Current
ON CHARACTERISTICS
DC Current Gain
ELECTRICAL CHARACTERISTICS
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
RiseTime
Turn–Off Time
Sorage Time
FallTime
= 25°C unless otherwise stated)
A
1
I
= 10mA IB= 0
C
IC= 10µAIE= 0
IC= 0 IE= 10µA0
VCE= 30V VBE= 0.5V
VCB= 50V IE= 0
VCB= 50V IE= 0
TA= 150°C
VCE= 30V VBE= 0.5V
IC= 0.1mA VCE= 10V
IC= 1mA VCE= 10V
IC= 10mA VCE= 10V
IC= 500mA VCE= 10V
IC= 150mA IB= 15mA
1
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
2
VCE= 20V IC= 50mA
f = 100MHz
VCB= 10V IE= 0
f = 100kHz
VBE= 2..0V IC= 0
f = 100kHz
VCC= 30V IC= 150mA
IB1= 15mA
VCC= 6V IC= 150mA
IB1= IB2=15mA
40
60
V
5.0
50
nA
0.02
µA
20
50
nA
20
25
—
35
1
20
0.4
V
1.6
1
1.3
V
2.6
200
MHz
8.0
pF
30
26 45
6.0 10
ns
20 40
70 100
50 80
ns
20 30
1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
2) ftis defined as the frequency at which |hfe| extrapolates to untity.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Prelim. 11/98
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