Seme 2N2857CSM Datasheet

2N2857CSM

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

Prelim. 7/95

LAB

SEME

HIGH FREQUENCY

NPN TRANSIST OR IN A

HERMETICALLY SEALED

CERAMIC SURFA CE MOUNT PACKA GE

FOR HIGH RELIABILITY APPLICATIONS

FEATURES

• SILICON NPN TRANSISTOR

• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)

• CECC SCREENING OPTIONS

APPLICATIONS:

Hermetically sealed surface mount version
of the popular 2N2857 for high reliability
applications requiring small size and low
weight devices.

V

CBO

Collector – Base Voltage

V

CEO

Collector – Emitter Voltage

V

EBO

Emitter – Base Voltage

I

C

Collector Current

P

D

Total Device Dissipation @ TA=25°C

Derate above 25°C

P

D

Total Device Dissipation @ TC=25°C

Derate above 25°C

T

STG

, T

J

Operating and Storage Temperature Range

30V
15V

2.5V

40mA

200mW

1.14mW / °C
300mW

1.72mW / °C

–65 to +200°C

MECHANICAL DATA

Dimensions in mm (inches)

SOT23 CERAMIC

(LCC1 PACKAGE)

ABSOLUTE MAXIMUM RATINGS (T

A

= 25°C unless otherwise stated)

PAD 1 – Base

Underside View

PAD 2 – Emitter PAD 3 – Collector

21

0.51 ± 0.10

(0.02 ± 0.004)

0.31

(0.012)

1.91 ± 0.10

(0.075 ± 0.004)

3.05 ± 0.13

(0.12 ± 0.005)

2.54 ± 0.13
(0.10 ± 0.005)

0.76 ± 0.15
(0.03 ± 0.006)

1.02 ± 0.10

(0.04 ± 0.004)

1.40

(0.055)

max.

A

0.31

(0.012)

rad.

rad.

A =

3

Parameter Test Conditions Min. Typ. Max. Unit

V

µA

V

—
nA
dB

—

—

pF

dB

ps

30
15

2.5
50

1

0.4

0.5 1

30
10

100

4.5
50 220
10 21

1

12.5 21

4.0 15

IC= 1µAIE= 0
IC= 3mA IB= 0
IE= 10µAIC= 0
VCB= 15V
IE= 0 TA= –55°C
IC= 10mA
IB= 1mA
VCE= 1V
IC= 3mA TA= 150°C
VCB= 16V IB= 0
VCE= 6V IC= 1.5mA
f = 450MHz RG= 50Ω
VCE= 6V IC= 2mA
VCE= 6V IC= 5mA
f = 100MHz
VCB= 10V IE= 0
f = 0.1 to 1 MHz
VCE= 6V IC= 1.50mA
f = 450MHz
VCE= 6V IE= 2mA
f = 31.9MHz

2N2857CSM

Semelab plc. Telephone [phone]. Telex: 341927. Fax [phone].

Prelim. 7/95

LAB

SEME

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise stated)

V

(BR)CBO*

Collector – Base Breakdown Voltage

V

(BR)CEO

Collector – Emitter Breakdown Voltage

V

(BR)EBO

Emitter – Base Breakdown Voltage

I

CBO

Collector – Base Cut-off Current

V

CE(sat)

Collector – Emitter Saturation Voltage

V

BE(sat)

Base – Emitter Saturation Voltage

h

FE

DC Current Gain

I

CES

Collector – Emitter Cut-off Current
NF Noise Figure
h

fe

Small Signal Current Gain
| hfe| Magnitude of h

fe

C

cb

Collector – Base Feedback

Capacitance
G

pe

Small Signal Power Gain

rb’C

c

Collector – Base Time Constant