Seme 2N2857 Datasheet

MECHANICAL DATA

Dimensions in mm (inches)

2N2857

0.48 (0.019)

0.41 (0.016)
dia.

2.54 (0.100)
Nom.

4.95 (0.195)

4.52 (0.178)

4.95 (0.195)

4.52 (0.178)

4

3

2

NPN TRANSISTOR

5.33 (0.210)

4.32 (0.170)

min.

12.7 (0.500)

1

FEA TURES

• SILICON NPN TRANSISTOR

APPLICATIONS:

• AMPLIFIER, OSCILLATOR AND
CONVERTER APPLICATIONS UP TO
500MHz

TO-72 METAL PACKAGE

ABSOLUTE MAXIMUM RATINGS (T

V
V
V
I

C

P
P
T

CBO
CEO
EBO

D
D
STG

, T

J

Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Total Device Dissipation @ TA=25°C
Total Device Dissipation @ TC=25°C
Operating and Storage Temperature Range

= 25°C unless otherwise stated)

A

–65 to 200°C

Semelab plc. Telephone [phone]. Fax [phone].e-mail [e-mail]

Website http://www.semelab.co.uk

30V
15V

2.5V

40mA
200mW
300mW

Prelim. 7/98

2N2857

ELECTRICAL CHARACTERISTICS (T

Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)CBO*

V

(BR)CEO

V

(BR)EBO

I

CBO

h

FE

NF Noise Figure

C

EBO

G

pe

rbB’C

’b’c

T Transition Frequency

f

C

re

P

c

Collector – Base Breakdown Voltage
Collector – Emitter Breakdown Voltage
Emitter – Base Breakdown Voltage

Collector – Base Cut-off Current
DC Current Gain

Emitter Base Capacitance

Power Gain (Neutralised)

Feedback Time Constant

Reverse Capacitance

Oscillator Power Output

= 25°C unless otherwise stated)

A

IC= 1µAIE= 0
IC= 3mA IB= 0
IE= 10µAIC= 0
VCB= 15V
IE= 0 Tamb= 150°C
VCE= 1V IC= 3mA
VCE= 6V IC= 1.5mA
f = 450MHz RG= 50Ω
VEB= 0.5V IC= 0
f = 1 MHz
VCE= 6V IC= 1.5mA
f = 450MHz RG= 50Ω
VCB= 6V IC= 2mA
f = 31.9MHz
VCE= 6V IC= 5mA
f = 100 MHz
VCE= 10V IC= 0
f = 1 MHz
VCB= 10V IC= 12mA
f = 500MHz

30
15

V

2.5
10

1

30 150

3.8 4.5

1.4

12.5 19

4715

11.9

0.6 1

30

nA
µA

—

dB

pF

dB

ps

GHz

pF

mW

Semelab plc. Telephone [phone]. Fax [phone].e-mail [e-mail]

Website http://www.semelab.co.uk

Prelim. 7/98