Seme 2N2484ACSM Datasheet
2N2484CSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
HIGH SPEED, MEDIUM POWER, NPN
GENERAL PURPOSE TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2484 for high reliability
applications requiring small size and low
weight devices.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ TA=25°C
Derate above 25°C
P
D
Total Device Dissipation @ TC=25°C
Derate above 25°C
T
STG
, T
J
Operating and Storage Temperature Range
60V
60V
6V
50mA
360mW
2.06mW / °C
1.2W
6.85mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Parameter Test Conditions Min. Typ. Max. Unit
V
nA
V
—
MHz
pF
pF
kΩ
x 10
-6
—
60
60
6
10
10
0.35
0.5 0.7
30
100 500
175
200
250
800
15
60
6
6
3.5 24
800
150 900
IC= 10µAIE= 0
IC= 10mA IB= 0
IE= 10µAIC= 0
VCB= 45V IE= 0
VBE= 5V IC= 0
IC= 1mA IB= 0.1mA
IC= 0.1mA VCE= 5V
IC= 1µAVCE= 5V
IC= 10µAVCE= 5V
IC= 100µAVCE= 5V
IC= 500µAVCE= 5V
IC= 1mA VCE= 5V
IC= 10mA VCE= 5V
f = 5MHz IC= 0.05mA
f = 30MHz IC= 0.5mA
VCB= 5V IE= 0
f = 140kHz
VBE= 0.5V IC= 0
f = 140kHz
VCE= 5V
IC= 1mA
f = 1kHz
2N2484CSM
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/95
LAB
SEME
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
V
(BR)CBO*
Collector – Base Breakdown Voltage
V
(BR)CEO
Collector – Emitter Breakdown Voltage
V
(BR)EBO
Emitter – Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(on)
Base – Emitter On Voltage
h
FE
DC Current Gain
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ie
Input Impedance
h
re
Voltage Feedback Ratio
h
fe
Small Signal Current Gain
* Pulse Test: tp≤ 300µs, δ≤2%.
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