Seme 2N2369ADCSM Datasheet
2N2369ADCSM
Prelim. 3/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
DU AL HIGH SPEED , MEDIUM PO WER, NPN
SWITCHING TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FEATURES
• DUAL SILICON PLANAR EPITAXIAL DUAL
NPN TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• SCREENING OPTIONS AVAILABLE
APPLICATIONS:
Hermetically sealed dual surface mount
dual version of the popular 2N2369A for
high reliability / space applications
requiring small size and low weight
devices.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ TA=25°C
Derate above 25°C
P
D
Total Device Dissipation @ TC=25°C
Derate above 25°C
T
STG
, T
J
Operating and Storage Temperature Range
40V
15V
4.5V
200mA
360mW
2.06mW / °C
680mW/°C
3.88mW/°C
500mW
2.85mW / °C
800mW/°C
4.57mW/°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS(T
A
= 25°C unless otherwise stated)
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
PER SIDE TOTAL DEVICE
–65 to +200°C
2.29 ± 0.20
(0.09 ± 0.008)
2
A
2.54 ± 0.13
(0.10 ± 0.005)
1.65 ± 0.13
(0.065 ± 0.005)
3
1
6.22 ± 0.13
(0.245 ± 0.005)
4
56
0.23
(0.009)
1.40 ± 0.15
(0.055 ± 0.006)
0.64 ± 0.08
(0.025 ± 0.003)
rad.
1.27 ± 0.13
A =
(0.05 ± 0.005)
4.32 ± 0.13
(0.170 ± 0.005)
Parameter Test Conditions Min. Typ. Max. Unit
2N2369ADCSM
Prelim. 3/00
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
IC= 10mA
IC= 10mA
IE= 10mA
VCE= 20V
VCE= 10V
TA= +150°C
VCB= 20V
TA= +125°C
VEB= 4V
IC= 10mA IB= 1mA
TA= +150°C
IC= 30mA IB= 3mA
IC= 100mA IB= 10mA
TA= +25°C
IC= 10mA
TA= +150°C
IB= 1mA
TA= –55°C
IC= 30mA IB= 3mA
IC= 100mA IB= 10mA
IC= 10mA VCE= 0.35V
IC= 30mA VCE= 0.40V
IC= 10mA VCE= 1V
TA= –55°C
IC= 100mA VCE= 1V
IC= 10mA VCE= 10V
f = 100MHz
VCB= 5V IE= 0
f = 100kHz to 1MHz
VEB= 0.5V IC= 0
f = 100kHz to 1MHz
IC= 10mA
IB1= –IB2= 10mA
IC= 10mA
IB1= 3mA IB2= –1.5mA
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
V
(BR)CEO*
Collector – Emitter Breakdown Voltage
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)EBO
Emitter – Base Breakdown Voltage
I
CES
Collector – Emitter Cut-off Current
I
CBO
Collector – Base Cut-off Current
I
EBO
Emitter – Base Cut-off Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE*
Current Gain
|hfe| Magnitude of h
fe
C
ob
Output Capacitance
C
ib
Input Capacitance
t
s
Storage Time
t
on
Turn–On Time
t
off
Turn–Off Time
15
40
4.5
0.40
0.30
30
0.20
30
0.25
0.20
0.30
0.25
0.43
0.70 0.85
0.59
1.02
0.90
1.20
40 120
30 120
40 120
20
20 120
510
4
5
13
12
18
V
V
V
m
A
m
A
m
A
V
V
—
—
pF
ns
ns
* Pulse Test: tp£
300ms, d£2%.
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