Seme 2N2369ACSM Datasheet
2N2369ACSM
Prelim. 3/00
LAB
SEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
HIGH SPEED, MEDIUM POWER, NPN
SWITCHING TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version of
the popular 2N2369A for high reliability /
space applications requiring small size and
low weight devices.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current
P
D
Total Device Dissipation @ TA=25°C
Derate above 25°C
P
D
Total Device Dissipation @ TC=25°C
Derate above 25°C
T
STG
, T
J
Operating and Storage Temperature Range
40V
15V
4.5V
200mA
360mW
2.06mW / °C
680mW
6.85mW / °C
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
Parameter Test Conditions Min. Typ. Max. Unit
2N2369ACSM
Prelim. 3/00
LAB
SEME
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
IC= 10mA
IC= 10mA
IE= 10mA
VCE= 20V
VCE= 10V
TA= +150°C
VCB= 20V
TA= +125°C
VEB= 4V
IC= 10mA IB= 1mA
TA= +150°C
IC= 30mA IB= 3mA
IC= 100mA IB= 10mA
IC= 10mA TA= +25°C
IB= 1mA TA= +150°C
TA= –55°C
IC= 30mA IB= 3mA
IC= 100mA IB= 10mA
IC= 10mA VCE= 0.35V
IC= 30mA VCE= 0.40V
IC= 10mA VCE= 1V
TA= –55°C
IC= 100mA VCE= 1V
IC= 10mA VCE= 10V
f = 100MHz
VCB= 5V IE= 0
f = 100kHz to 1MHz
VEB= 0.5V IC= 0
f = 100kHz to 1MHz
IC= 10mA
IB1= –IB2= 10mA
IC= 10mA
IB1= 3mA IB2= –1.5mA
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
V
(BR)CEO*
Collector – Emitter Breakdown Voltage
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)EBO
Emitter – Base Breakdown Voltage
I
CES
Collector – Emitter Cut-off Current
I
CBO
Collector – Base Cut-off Current
I
EBO
Emitter – Base Cut-off Current
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
h
FE*
Current Gain
|hfe| Magnitude of h
fe
C
ob
Output Capacitance
C
ib
Input Capacitance
t
s
Storage Time
t
on
Turn–On Time
t
off
Turn–Off Time
15
40
4.5
0.40
0.30
30
0.20
30
0.25
0.20
0.30
0.25
0.43
0.70 0.85
0.59
1.02
0.90
1.20
40 120
30 120
40 120
20
20 120
510
4
5
13
12
18
V
V
V
m
A
m
A
m
A
V
V
—
—
pF
ns
ns
* Pulse Test: tp£
300ms, d£2%.
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