Seme 2N2223A Datasheet
Prelim. 5/98
LAB
SEME
2N2223A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
DU AL NPN TRANSIST OR
IN TO77 HERMETIC PACKAGE
FEATURES
• Silicon Planar Epitaxial NPN Transistor
• High Rel and Screening Options Available.
V
CEO
Collector – Emitter Voltage
V
CER
Collector – Emitter Voltage
V
CBO
Collector – Base Voltage
V
EBO
Emitter – Base Voltage
I
C
Collector Current
TJ, T
stg
Operating and Storage Junction Temperature Range
P
D
Total Device Dissipation @ TA= 25°C
Derate above 25°C
P
D
Total Device Dissipation @ TC= 25°C
Derate above 25°C
60V
80V
100V
7V
500mA
–65 to +200°C
Per Side Total Device
0.5W 0.6W
2.86mW/°C 3.43mW/°C
1.6W 3.0W
9.1mW/°C 11.4mW/°C
MECHANICAL DATA
Dimensions in mm (inches)
TO77 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PIN 1 – Collector
PIN 2 – Base
PIN 3 – Emitter
PIN 4 – Emitter
PIN 5 – Base
PIN 6 – Collector
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
Min.
12.7 (0 .5 00)
0.41 (0.016)
0.53 (0.021)
5.08
(0.200)
2.54
(0.100)
1.02
(0.040)
Max.
2.54
(0.100)
4
5
6
3
2
1
0.74 (0.029)
1.14 (0.045)
45˚
0.71 (0.028)
0.86 (0.034)
IC= 100mA RBE£10W
IC= 30mA IB= 0
IC= 100mAIE= 0
IE= 100mAIC= 0
VCB= 80V
IE= 0 TA= 150°C
VBE= 5V IC= 0
IC= 10mAVCE= 5V
IC= 100mAVCE= 5V
IC= 10mA VCE= 5V
IC= 50mA IB= 5mA
IC= 50mA IB= 5mA
IC= 50mA VCE= 10V
f = 20MHz
IE= 0 VCB= 10V
f = 1MHz
I
C
= 0 VBE= 0.5V
f = 1MHz
I
C
= 1mA VCB= 5V
f = 1kHz
IC= 1mA VCE= 5V
f = 1kHz
IC= 100mAVCE= 5V
IC= 100mAVCE= 5V
I
C
= 100mAVCE= 5V
T
A
= –55 to +125°C
Prelim. 5/98
LAB
SEME
2N2223A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise stated)
V
CER(sus)*
Collector – Emitter Breakdown Voltage
V
CEO(sus)*
Collector – Emitter Sustaining Voltage
V
(BR)CBO
Collector – Base Breakdown Voltage
V
(BR)EBO
Emitter – Base Breakdown Voltage
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
V
CE(sat)
Collector – Emitter Saturation Voltage
V
BE(sat)
Base – Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
h
ib
Input Impedance
h
fe
Small Signal Current Gain
h
oe
Output Admittance
h
FE1/hFE2
DC Current Gain Ratio
1
½
V
BE1-VBE2
½
Base – Emitter Voltage Differential
D(
V
BE1-VBE2
) Base – Emitter Voltage Differential
D
T Change Due To Temperature
80
60
100
7
0.01
15
10
15
25 150
50 200
1.2
0.9
50
15
85
20 30
40 200
.05
0.9 1.0
5.0
25
V
V
V
V
m
A
nA
—
V
MHz
pF
pF
W
—
m
mhos
—
mV
m
V/°C
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
MATCHING CHARACTERISTICS
* Pulse Test: tp£
300ms, d£2%.
1) The lowest h
FE
reading is taken as h
FE1
for this ratio.
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