Seme 2N2222ACSM4 Datasheet
SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
2N2222ACSM4
HIGH SPEED, MEDIUM POWER, NPN
SWITCHING TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
0.64 ± 0.08
(0.025 ± 0.003)
3.81 ± 0.13
(0.15 ± 0.005)
4
1.02 ± 0.20
(0.04 ± 0.008)
PAD 1 – Collector
PAD 2 – N/C
5.59 ± 0.13
(0.22 ± 0.005)
0.23
(0.009)
23
1
2.03 ± 0.20
(0.08 ± 0.008)
1.27 ± 0.05
LCC3 PACKAGE
Underside View
PAD 3 – Emitter
PAD 4 – Base
(0.01 ± 0.001)
rad.
(0.05 ± 0.002)
0.25 ± 0.03
1.40 ± 0.15
(0.055 ± 0.006)
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE
• CECC SCREENING OPTIONS
0.23
min.
(0.009)
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
Hermetically sealed surface mount version of
the popular 2N2222A for high reliability / space
applications requiring small size and low
weight devices.
ABSOLUTE MAXIMUM RATINGS (T
V
V
V
I
P
P
R
T
C
CBO
CEO
EBO
D
D
ja
stg
Collector – Base Voltage
Collector – Emitter Voltage (IB= 0)
Emitter – Base Voltage (IB= 0)
Collector Current
Total Device Dissipation
Derate above 50°C
Thermal Resistance Junction to Ambient
Storage Temperature
= 25°C unless otherwise stated)
case
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
75V
40V
6V
800mA
350mW
2.0mW / °C
350°C/W
–55 to 200°C
Prelim. 4/99
SEME
LAB
2N2222ACSM4
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
V
CEO(sus)*
V
(BR)CBO*
V
(BR)EBO*
I
CEX*
I
CBO*
I
EBO*
I
BL*
V
CE(sat)*
V
BE(sat)*
h
FE*
* Pulse test tp = 300µs , δ ≤ 2%
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current (IC= 0)
Collector – Base Cut-off Current
Emitter Cut-off Current (IC= 0)
Base Current
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
DC Current Gain
TA= –55°C
= 25°C unless otherwise stated)
case
IC= 10mA
IC= 10µA
IE= 10µAIC= 0
IB= 0 VCE= 60V
IE= 0 VCB= 60V
TC= 125°C
IC= 0 VEB= 3V (off)
VCE= 60V VEB= 3V (off)
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 500mA IC= 50mA
IC= 0.1mA VCE= 10V
IC= 1mA VCE= 10V
IC= 10mA VCE= 10V
IC= 10mA VCE= 10V
IC= 150mA VCE= 10V
IC= 150mA VCE= 1V
IC= 500mA VCE= 10V
40
75
6
10
10
10
10
20
0.3
1
0.6 1.2
2
35
50
75
35
100 300
50
40
V
V
V
nA
nA
µA
nA
nA
V
V
—
DYNAMIC CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter Test Conditions Min. Typ. Max. Unit
f
T
C
ob
C
ib
h
fe
Transition Frequency
Output Capacitance
Input Capacitance
Small Signal Current Gain
IC= 20mA VCE= 20V f = 100MHz
VCB= 10V IE= 0 f = 1.0MHz
VBE= 0.5V IC= 0 f = 1.0MHz
IC= 1mA VCE= 10V f = 1kHz
IC= 10mA VCE= 10V f = 1kHz
SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (T
Parameter Test Conditions Min. Typ. Max. Unit
t
d
t
r
t
s
t
f
fTis defined as the frequency at which hFEextrapolates to unity.
Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
Delay Time
Rise Time
Storage Time
Fall Time
E-mail: sales@semelab.co.uk
VCC= 30V VBE= 0.5V (off)
IC1= 150mA IB1= 15mA
VCC= 30V IC= 150mA
IB1= IB2= 15mA
Website: http://www.semelab.co.uk
300
50 300
75 375
= 25°C unless otherwise stated)
case
8
30
10
25
225
60
Prelim. 4/99
MHz
pF
pF
ns
ns
ns
ns
Loading...