Seme 2N2222ACSM Datasheet
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 3/00
LAB
SEME
2N2222ACSM
HIGH SPEED, MEDIUM POWER, NPN
SWITCHING TRANSIST OR IN A
HERMETICALLY SEALED
CERAMIC SURFA CE MOUNT PACKA GE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
• CECC SCREENING OPTIONS
• SPACE QUALITY LEVELS OPTIONS
• HIGH SPEED SATURATED SWITCHING
APPLICATIONS:
Hermetically sealed surface mount version
of the popular 2N2222A for high reliability /
space applications requiring small size
and low weight devices.
V
CBO
Collector – Base Voltage
V
CEO
Collector – Emitter Voltage (IB= 0)
V
EBO
Emitter – Base Voltage (IB= 0)
I
C
Collector Current
P
D
Total Device Dissipation
P
D
Derate above 50°C
R
ja
Thermal Resistance Junction to Ambient
T
stg,Tj
Storage Temperature,Operating Temp Range
75V
40V
6V
600mA
350mW
2.0mW / °C
350°C/W
–55 to 200°C
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
rad.
A =
3
SOT23 CERAMIC
(LCC1 PACKAGE)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 3/00
LAB
SEME
2N2222ACSM
Parameter Test Conditions Min. Typ. Max. Unit
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
IC= 10mA
IC= 10mA
IE= 10mAIC= 0
IB= 0 VCE= 60V
IE= 0 VCB= 60V
TC= 125°C
IC= 0 VEB= 3V (off)
VCE= 60V VEB= 3V (off)
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 500mA IC= 50mA
IC= 0.1mA VCE= 10V
IC= 1mA VCE= 10V
IC= 10mA VCE= 10V
IC= 10mA VCE= 10V
IC= 150mA VCE= 10V
IC= 150mA VCE= 1V
IC= 500mA VCE= 10V
ELECTRICAL CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
V
CEO(sus)*
Collector – Emitter Sustaining Voltage
V
(BR)CBO*
Collector – Base Breakdown Voltage
V
(BR)EBO*
Emitter – Base Breakdown Voltage
I
CEX*
Collector Cut-off Current (IC= 0)
I
CBO*
Collector – Base Cut-off Current
I
EBO*
Emitter Cut-off Current (IC= 0)
I
BL*
Base Current
V
CE(sat)*
Collector – Emitter Saturation Voltage
V
BE(sat)*
Base – Emitter Saturation Voltage
h
FE*
DC Current Gain
TA= –55°C
40
75
6
10
10
10
10
20
0.3
1
0.6 1.2
2
35
50
75
35
100 300
50
40
V
V
V
nA
nA
m
A
nA
nA
V
V
—
f
T
Transition Frequency
C
ob
Output Capacitance
C
ib
Input Capacitance
h
fe
Small Signal Current Gain
IC= 20mA VCE= 20V f = 100MHz
VCB= 10V IE= 0 f = 1.0MHz
VBE= 0.5V IC= 0 f = 1.0MHz
IC= 1mA VCE= 10V f = 1kHz
IC= 10mA VCE= 10V f = 1kHz
300
8
30
50 300
75 375
MHz
pF
pF
10
25
225
60
ns
ns
ns
ns
VCC= 30V VBE= 0.5V (off)
IC1= 150mA IB1= 15mA
VCC= 30V IC= 150mA
IB1= IB2= 15mA
fTis defined as the frequency at which hFEextrapolates to unity.
* Pulse test tp = 300ms ,
d £
2%
DYNAMIC CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (T
case
= 25°C unless otherwise stated)
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