Seme 2N2222A Datasheet
SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
2N2222A
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
13
2
5.33 (0.210)
12.7 (0.500)
4.32 (0.170)
min.
HIGH SPEED
MEDIUM PO WER, NPN
SWITCHING TRANSIST OR
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• HIGH SPEED SATURATED SWITCHING
• ALSO AVAILABLE IN CERAMIC SURFACE
MOUNT PACKAGE
TO–18 METAL PACKAGE
Underside View
PIN 1 – Emitter
PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (T
V
CBO
V
CEO
V
EBO
I
C
P
D
P
D
TJ, T
STG
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Total Device Dissipation @ TA= 25°C
Derate above 25°C
Total Device Dissipation @ TC= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
= 25°C unless otherwise stated)
A
75V
40V
6V
800mA
0.5mW
2.28mW / °C
1.2W
6.85mW / °C
–65 to +200°C
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/96
SEME
LAB
2N2222A
ELECTRICAL CHARACTERISTICS (T
Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEX
I
CBO
I
EBO
I
BL
V
CE(sat)
V
BE(sat)
h
FE
Collector – Emitter Sustaining Voltage
Collector – Base Breakdown Voltage
Emitter – Base Breakdown Voltage
Collector Cut-off Current
Collector – Base Cut-off Current
Emitter Cut-off Current (IC= 0)
Base Current
ON CHARACTERISTICS
1
Collector – Emitter Saturation Voltage
1
Base – Emitter Saturation Voltage
DC Current Gain
= 25°C unless otherwise stated)
A
IC= 10mA IB= 0
IC= 10µAIE= 0
IE= 10µAIC= 0
VCE= 60V V
IE= 0 VCB= 60V
TA= 150°C
IC= 0 VEB= 3V
VCE= 60V V
IC= 150mA IB= 15mA
IC= 500mA IB= 50mA
IC= 150mA IB= 15mA
IC= 500mA IC= 50mA
IC= 0.1mA VCE= 10V
IC= 1mA VCE= 10V
IC= 10mA VCE= 10V
TA= –55°C
IC= 150mA VCE= 10V
IC= 150mA VCE= 1V
IC= 500mA VCE= 10V
EB(off)
EB(off)
= 3V
= 3V
1
1
1
40
75
6
10
0.01
10
10
20
0.3
1
0.6 1.2
2
35
50
75
35
100 300
50
40
V
V
V
nA
µA
nA
nA
V
V
—
SMALL SIGNAL CHARACTERISTICS
f
T
C
ob
C
ib
h
fe
t
d
t
r
t
s
t
f
Transition Frequency
Output Capacitance
Input Capacitance
Small Signal Current Gain
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
2
IC= 20mA VCE= 20V f = 100MHz
VCB= 10V IE= 0 f = 100kHz
VEB= 0.5V IC= 0 f = 100kHz
IC= 1mA VCE= 10V f = 1kHz
IC= 10mA VCE= 10V f = 1kHz
VCC= 30V V
IC= 150mA IB1= 15mA
VCC= 30V IC= 150mA
IB1= IB2= 15mA
BE(off)
= 0.5V
NOTES:
1) Pulse test: tp≤ 300µs , δ ≤ 2%
2) fTis defined as the frequency at which hFEextrapolates to unity.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
300
25
50 300
75 375
10
25
225
60
8
Prelim. 3/96
MHz
pF
—
ns
ns
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