Seme 1N4003CSM4 Datasheet
T
stg
Storage Temperature Range -55 to +175 °C
T
j
Max junction temperature +150°C
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
Reverse Voltage
Peak Reverse Voltage
Average Half Wave Rectified T
amb
£
25 °C
Forward Current T
amb
=
100 °C
D.C Forward Current
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current (half cycle surge , 60 c.p.s)
200
200
1.0
0.75
1
10
30
1N4003CSM4
MECHANICAL DATA
Dimensions in mm (inches)
GENERAL PURPOSE
SILICON RECTIFIER DIODE
Prelim. 6/00
LAB
SEME
V
F
Forward Voltage Drop
V
F(AV)
Full-Cycle average forward
voltage drop
I
R
Reverse Current
I
R(AV)
Full cycle average reverse current
I
F
= 1A
I
F(AV)
= 1A
VR= 50 V , T
amb
= 25 °C
V
R
= 50 V , T
amb
= 100 °C
V
RRM
= 50 V , T
amb
= 75 °C
1.1
0.8
10
50
30
V
V
m
A
m
A
CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
V
R
V
RRM
I
F(AV)
I
F
I
FRM
I
FSM
General Purpose Rectifier Diode
In Hermetic Ceramic Surface Mount Package
For High Reliability Applications
V
V
A
A
A
A
PAD 1 — Cathode
PAD 2 — No Connection
PAD 3 — No Connection
PAD 4 — Anode
(LCC3 PACKAGE)
Underside View
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5.59 ± 0.13
(0.22 ± 0.005)
23
0.64 ± 0.08
(0.025 ± 0.003)
3.81 ± 0.13
(0.15 ± 0.005)
4
1.02 ± 0.20
(0.04 ± 0.008)
1
2.03 ± 0.20
(0.08 ± 0.008)
0.23
(0.009)
1.27 ± 0.05
(0.05 ± 0.002)
0.25 ± 0.03
(0.01 ± 0.001)
rad.
1.40 ± 0.15
(0.055 ± 0.006)
0.23
(0.009)
min.
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