Seme 1N4001CSM4 Datasheet

1
23
4
5.59 ± 0.13
(0.22 ± 0.005)
0.23
(0.009)
rad.
(0.04 ± 0.008)
(0.08 ± 0.008)
(0.055 ± 0.006)
(0.01 ± 0.001)
0.23
(0.009)
min.
1.27 ± 0.05 (0.05 ± 0.002)
3.81 ± 0.13 (0.15 ± 0.005)
0.64 ± 0.08 (0.025 ± 0.003)
Parameter Test Conditions Min. Typ. Max. Unit
Parameter Test Conditions Min. Typ. Max. Unit
Reverse Voltage Peak Reverse Voltage Average Half Wave Rectified T
amb
£
25 °C
Forward Current T
amb
=
100 °C D.C Forward Current Repetitive Peak Forward Current Non-Repetitive Peak Forward Current (half cycle surge , 60 c.p.s)
50 50
1.0
0.75 1
10 30
1N4001CSM4
MECHANICAL DATA
Dimensions in mm (inches)
GENERAL PURPOSE
SILICON RECTIFIER DIODE
LAB
SEME
V
F
Forward Voltage Drop
V
F(AV)
Full-Cycle average forward voltage drop
I
R
Reverse Current
I
R(AV)
Full cycle average reverse current
IF= 1A I
F(AV)
= 1A
VR= 50 V , T
amb
= 25 °C
VR= 50 V , T
amb
= 100 °C
V
RRM
= 50 V , T
amb
= 75 °C
1.1
0.8 10
50 30
V V
m
A
m
A
CHARACTERISTICS (T
case
= 25°C unless otherwise stated)
ABSOLUTE MAXIMUM RATINGS (T
case
= 25°C unless otherwise stated)
V
R
V
RRM
I
F(AV)
I
F
I
FRM
I
FSM
General Purpose Rectifier Diode In A
Hermetic Ceramic Surface Mount Package
for High Reliability Applications
V V
A A
A A
PAD 1= Cathode PAD 2 = No Connection
PAD 3 = No Connection PAD 4 = Anode
LCC3 PACKAGE
Underside View
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E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Prelim. 07/00
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