JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
S9013
FEATURES
High Collector Current.
z
z Complementary to S9012.
z Excellent h
MARKING: J3
MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
IC
PC
R
ΘJA
Tj
T
stg
TRANSISTOR (NPN)
Linearity.
FE
=25℃ unless otherwise noted)
a
Collector-Base Voltage 40
Collector-Emitter Voltage 25
Emitter-Base Voltage 5
Collector Current 500 mA
Collector Power Dissipation 300 mW
Thermal Resistance From Junction To Ambient
Junction Temperature 150
Storage Temperature
416
-55～+150
V
V
V
℃/W
℃
℃
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
V
V
IC=0.1mA, IE=0 40
(BR)CBO
IC=1mA, IB=0 25 V
(BR)CEO
IE=0.1mA, IC=0 5 V
(BR)EBO
VCB=40V, IE=0 0.1 uA
I
CBO
VCE=20V, IB=0 0.1 uA
I
CEO
VEB=5V, IC=0 0.1 uA
I
EBO
h
VCE=1V, IC=50mA 120 400
FE(1)
VCE=1V, IC=500mA 40
h
FE(2)
I
V
CE(sat)
V
BE(sat)
VCB=1V,IC=10mA, 0.7 V
V
BE
VCE=6V,IC=20mA, f=30MHz 150 MHz
f
T
VCB=6V, IE=0, f=1MHz 8 pF
C
ob
=500mA, IB=50mA 0.6 V
C
I
=500mA, IB=50mA 1.2 V
C
CLASSIFICATION OF
RANK L H J
RANGE
h
FE(1)
120-200 200-350 300-400
V
B,Nov,2011
Typical Characterisitics
B,Nov,2011
S9013
350uA
300uA
250uA
COMMON
EMITTER
=25℃
T
a
(mA)
C
100
Static Characteristic
400uA
80
60
200uA
40
20
COLLECTOR CURRENT I
150uA
100uA
IB=50uA
0
048121620
COLLECTOR-EMITTER VOLTAGE VCE (V)
500
300
(mV)
100
CEsat
CEsat
——
I
C
V
Ta=100℃
VOLTAGE V
30
Ta=25℃
COLLECTOR-EMITTER SATURATION
10
1 10 100
303
COLLECTOR CURRENT IC (mA)
β=10
500
FE
DC CURRENT GAIN h
(V)
VOLTAGE V
BASE-EMITTER SATURATION
1000
hFE ——
Ta=100℃
Ta=25℃
100
10
1 10 100
1.2
0.8
BEsat
3
COLLECTOR CURRENT IC (mA)
V
BEsat
——
30
Ta=25℃
Ta=100℃
0.4
0.0
1 10 100
3
30
COLLECTOR CURRENT IC (mA)
I
C
COMMON EMITTER
=1V
V
CE
I
C
500
β=10
500
Ta=100℃
V
BE
Ta=25℃
100
COMMON EMITTER
VCE=1V
30
(mA)
C
10
3
1
COLLECTOR CURRENT I
0.3
0.1
0.0 0.2 0.4 0.6 0.8 1.0
IC ——
BASE-EMMITER VOLTAGE VBE (V)
1000
(MHz)
300
T
100
fT —— I
C
VCE=6V
T
=25℃
a
100
30
10
CAPACITANCE C (pF)
3
1
0.1 1 10
Cob/ Cib ——
0.3
VCB/ V
EB
f=1MHz
=0/ IC=0
I
E
T
=25℃
C
ib
C
ob
3
a
20
REVERSE VOLTAGE V (V)
400
300
(mW)
200
C
PC —— T
a
P
TRANSITION FREQUENCY f
100
COLLECTOR POWER DISSIPATION
10
10
30
100
COLLECTOR CURRENT IC (mA)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ( )℃
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