SavantIC 2SC2588 Schematics

SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2588
DESCRIPTION
·With MT-200 package
·Excellent safe operating area
·Fast switching speed
·Suited for high frequency power amplifiers,
audio power amplifiers,switching regulators
and DC-DC converters applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
3 Emitter
Collector;connected to mounting base
Fig.1 simplified outline (MT-200) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 130 V
CBO
V
Collector-emitter voltage Open base 130 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
I
C
P
C
T
j
Collector current 12 A
Collector power dissipation TC=25 120 W
Junction temperature 150
T
stg
Storage temperature -55~150
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SC2588
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
V
I
CBO
I
EBO
h
FE-1
h
FE-2
(sat)
BE
f
T
Collector-emitter breakdown voltage IC=1mA; RBE=9 120 V
Collector-base breakdown voltage IC=50µA; IE=0 120 V
Emitter-base breakdown voltage IE=50µA; IC=0 5 V
Collector-emitter saturation voltage IC=5 A;IB=0.5 A 1.8 V
Base-emitter voltage IC=5A ; VCE=5V 1.7 V
Collector cut-off current VCB=120V; IE=0 50 µA
Emitter cut-off current VEB=5V; IC=0 50 µA
DC current gain IC=2A ; VCE=5V 60 200
DC current gain IC=7A ; VCE=5V 40
Transition frequency IC=1A ; VCB=10V,f=1MHz 60 MHz
COB Output capacitance IE=0; VCB=10V;f=1MHz 170 pF
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