Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
High-Frequency, Low-Frequency
General-Purpose Amplifier Applications
Ordering number:EN1405B
2SK436
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· AM tuner RF amplifiers and low-noise amplifiers.
Features
· Largeyfs.
· Ultralow noise figure.
· Small Crss.
· Ultrasmall-sized package permitting 2SK436-applied
sets to be made small and slim.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
SSD
SDG
G
D
D
Package Dimensions
unit:mm
2050A
[2SK436]
3
1
0.95
2
0.95
1.9
2.9
0.16
0.5
2.5
1.5
0.5
0 to 0.1
1 : Source
1.1
0.8
2 : Drain
3 : Gate
SANYO : CP
51V
51–V
01Am
02Am
051Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBniarD-ot-etaGV
tnerruCegakaeLecruoS-ot-etaGI
tnerruCniarDegatloVetaG-oreZI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDV,V5=
ecnaticapaCtupnIssiCVSDV,V5=
ecnaticapaCrefsnarTesreveRssrCVSDV,V5=
erugiFesioNFNVSDI,V5=
* : The 2SK436 is classified by I
Note) Marking : A
I
rank : 17, 18, 19, 20, 21, 22
DSS
as follows : (unit : mA)
DSS
I
SDG)RB(
V
SSG
*VSDV,V5=
SSD
V
)ffo(SG
V,Aµ01–=
G
SG
SD
0=51–V
SD
V,V01–=
0=0.1–An
SD
0=*2.1*0.21Am
SG
I,V5=
Aµ001=5.0–5.1–V
D
SG
SG
SG
D
1.2712.10.3817.12.4915.2
0.6025.35.8120.50.21223.7
zHk1=f,0=0.871Sm
zHM1=f,0=0.7Fp
zHM1=f,0=0.2Fp
k1=gR,Am1= Ω zHk1=f,5.1Bd
nimpytxam
42099TH (KT)/90895MO (KOTO)/6017KI/N283KI, TS (KOTO) 8-5846 No.1405–1/6
sgnitaR
tinU