SVD301
Ordering number : EN5500A
X Band VCO, PLO
Hyperabrupt Junction Type GaAs Varactor Diode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
90597GI (KOTO) No.5500-1/2
Package Dimensions
unit: mm
1274
[SVD301]
1 : Cathode
2 : Anode
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Peak Reverse Voltage V
rm
30 V
Average Rectified Current I
fm
30 mA
Allowable Power Dissipation P
D
200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg –65 to +150 °C
Mounting Temperature Tm 230/10s °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Ratings
min typ max
Unit
Forward Voltage V
F
IF=10mA 1.4 V
Reverse Voltage V
R
IR=10µA –27 V
Reverse Current I
R
VR=25V 250 nA
Interterminal Capacitance C
t0V
VR=0V, f=1MHz 2.2 2.6 pF
Capacitance Ratio C
j0V
/ C
j25VVR
=0V, 25V, f=1MHz 17 20
Features
• High Q.
• High capacitance ratio.
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property lose.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of September, 1997. Specifications and information herein are
subject to change without notice.
1 10
0.1
1.0
10.0
Vbi=1.0V
Cj — Vr + Vbi
–50 –25 0 25 50 75 100
–6
–4
–2
0
2
4
6
δCj — Ta
Vr=1V
10V
5V
3V
3V
1V
5V
10V
f=1MHz
Junction Capacitance, Cj – pF
Capacitance Ratio, δCj – %
Reverse Voltage, Vr + Diffusion potential, Vbi – V
Ambient Temperature, Ta – °C