Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Diffused Junction Type Silicon Composite Varactor
AM Low Voltage Electronic Tuning Applications
Ordering number:ENN6264
SVC383
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Twin type varactor diode for low-voltage AM
electronic tuning use.
· Low voltage (6.5V).
· High Q.
· Possible to offer the SVC383 devices in a tape reel
packaging.
· Surface mount type.
· Small-sized package, permitting SVC383-applied
sets to be compact and slim.
Electrical Connection
Cathode
Anode Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesreveRV
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot55–
R
Package Dimensions
unit:mm
1293
[SVC383]
0.4
3
1.6 0.60.6
1
2
1.9
0.9
0.7 0.2
0.15
2.8
0.2
0.05
1 : Anode
2 : Anode
3 : Cathode
SANYO : CPH3
33V
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBV
tnerruCesreveRI
C
1*ecnaticapaClanimretretnI
rotcaFytilauQQV
oitaRecnaticapaCRCCV1C/
ecnareloTgnihctaM
*1 : The values of interterminal capacitance represent the average of measurements for two elements.
*2 : 1MHz signal : 20mVrms
* : SVC383 are classified by C1V as right : Marking : V3
C
C
∆ mC
I
R)RB(
R
V1
V5.4
V5.6
knaRCV1)Fp(
S515ot284
T045ot505
Aµ01=33V
R
VRV02= 001An
V
R
V
R
V
R
R
2*zHM1=f,V1=*284*045Fp
zHM1=f,V5.4=46Fp
zHM1=f,V5.6=1272Fp
zHM1=f,V1=002
V5.6
nimC/)nimC–xamC( × 001
V)2Ddna1DneewteB(
R
Capacitance rank : S, T
V5.6otV1=
sgnitaR
nimpytxam
5.715.42
0.2%
73099GI (KT) No.6264–1/3
tinU
1000
SVC383
C -- V
R
f=1MHz
7
VRF=20mVrms
10000
7
Interterminal Capacitance, C -- pF
100
5
3
2
Interterminal Capacitance
5
3
2
Quality Factor
1000
7
5
3
2
10
0
123
4
567
7
5
3
2
100
Quality Factor Q
Reverse Voltage, VR -- V
IT00989
1.10
1.08
1.06
1.04
1.02
Capacitance Ratio
1.00
0.98
0.96
6.5V
1.0V
2.0V
3.0V
C -- Ta
VR = 4.5V
3.0V
1.0V
2.0V
6.5V
VR = 4.5V
0.94
--75 --50 --25 0 25 50 75 100 125 150
Ambient Temperature, Ta -- °C
IT00990
No.6264–2/3