SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6649
Features
•
Miniaturization and high-integration of tuner sets
can be easily achieved due to the small package.
• High capacitance ratio and high quality factor.
•
Surface mount type.
Electrical Connection
C
NC
A
SVC325
Package Dimensions
unit : mm
1303
Diffused Junction Type Silicon Diode
SVC325
Varactor Diode
[SVC325]
2.9
0.4
3
1.6 0.60.6
1
2
1.9
0.7 0.2
0.15
2.8
0.9
0.2
0.05
1 : NC
2 : Anode
3 : Cathode
SANYO : CPH3
Specifications
Absolute Maximum Ratings at Tc=25°C
Parameter Symbol Conditions Ratings Unit
Reverse Voltage V
Junction T emperature Tj 125 °C
Storage T emperature T stg --55 to +125 °C
R
Electrical Characteristics at Tc=25°C
Parameter Symbol Conditions
Breakdown Voltage V
Reverse Current I
Interterminal Capacitance
Quality Factor Q VR=1.0V, f=1MHz 200
Capacitance Ratio CR C1.2V / C8.0V, f=1MHz 15.5
Marking : V2
Note)*1 1MHz signal : 20mVrms
(BR)RIR
R
C1.2V VR=1.2V, f=1MHz* 388.1 459.1 pF
C3.5V VR=3.5V, f=1MHz 144.2 192.1 pF
C6.0V VR=6.0V, f=1MHz 45.71 60.91 pF
C8.0V VR=8.0V, f=1MHz 20.30 27.05 pF
=10µA16V
VR=9V 100 nA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min max
16 V
Unit
92500 GI IM
No.6649-1/3
SVC325
Interterminal Capacitance, C -- pF
1000
100
C, Q -- V
R
10000
VRF=20mVrms
7
5
3
2
Quality factor Q (f=1MHz)
Interterminal capacitance C (f=1MHz)
7
5
3
2
7
5
3
2
1000
7
5
3
2
Quality factor, Q
10
012345678910
Reverse Voltage, VR -- V
C -- Ta
1.06
VR=1V
1.05
1.04
1.03
1.02
1.01
Capacitance Ratio
1.00
0.99
3V
7V
5V
100
IT02513
0.98
0.97
0.96
--75 --50 --25 0 25 50 75 100 125 150
Ambient Temperature, Ta -- °C
IT02514
No.6649-2/3