![](/html/48/485e/485e5d775286e02721bf05040bac6c33b2c6d328acd08dcd3ac2a66154017c64/bg1.png)
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Silicon Diffused Junction Type Varactor Diode
FM Receiver Electronic Tuning Applications
Ordering number:ENN5527A
SVC231
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Twin type varactor diode having an excellent large
input characteristic and intended for use in lowvoltage (high-voltage) FM electronic tuning applications.
· Small-sized package (CP), permitting SVC231applied sets to be compact and slim.
· Possible to offer the SVC231 devices in a tape reel
packaging, which facilitates automatic insertion.
· High Q.
Electrical Connection
Cathode
Anode
Anode
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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R
Package Dimensions
unit:mm
1 169A
[SVC231]
0.4
3
0.95
0.95
1
1.9
2.9
0.5
1.5
2
0.5
0.8
0.16
2.5
1.1
0 to 0.1
1 : Anode
2 : Anode
3 : Cathode
SANYO : CP
61V
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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oitaRecnaticapaCRCV0.8C/V0.2C3.26.2
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Note )* : Capacitance value of one diode
Marking : RV
∆ mC
I
R)RB(
R
V2CV
V8CV
Aµ01=61V
R
VRV01= 05An
R
R
R
V
R
zHM1=f,V0.2=98.3420.15Fp
zHM1=f,V0.8=56.7105.12Fp
zHM001=f,V0.3=001
nimC/)nimC-xamC(,zHM1=f,V0.8,V0.2= × 0013%
sgnitaR
nimpytxam
O0899GI (KT) No.5527–1/4
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SVC231
Address and Capacitance Value [pF]
VR=2V VR=8V
Address Capacitance [pF] Address Capacitance [pF]
22 43.89 to 45.21 82 17.65 to 18.20
23 44.93 to 46.31 83 18.03 to 18.63
24 46.03 to 47.16 84 18.46 to 19.10
25 47.45 to 48.63 85 18.92 to 19.56
26 48.34 to 49.82 86 19.38 to 20.03
27 49.52 to 51.02 87 19.85 to 20.53
88 20.35 to 21.02
89 20.84 to 21.50
SVC231 Rank Address
C8V
82 83 84 85 86 87 88 89
22
23
C2V 24
25
26
27
1.04
1.03
1.02
1.01
1.00
Capacitance Ratio
0.99
0.98
C -- Ta
f=1MHz
VRF=20mVrms
VR=2V
4V
6V
8V
8V
6V
4V
VR=2V
0.97
--75 --25--50 25 500 75 125100
Ambient Temperature, Ta -- °C
IT01132
No.5527–2/4