SANYO SVC224 Datasheet

Ordering number : ENN6515

Features

•

High capacitance ratio.

•

Best suited for VCO use.

SVC224

Varactor Diode for VCO

Package Dimensions

unit : mm

1184

0.4

0.5

0.4

Diffused Junction Silicon Diode

SVC224

[SVC224]

4.0

3.0

1.8

0.6

15.0

2.2

0.4

12

2.6

1 : Anode
2 : Cathode

SANYO : SPA

Specifications

0.7

3.0

3.8nom

0.7

Absolute Maximum Ratings at T a=25°C

Reverse Voltage V
Junction T emperature Tj 125 °C
Storage T emperature T stg −55 to +125 °C

Parameter Symbol Conditions Ratings Unit

R

16 V

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Breakdown Voltage V
Reverse Current I
Interterminal Capacitance C

Capacitance Ratio CR C
Quality Factor Q VR=3.0V, f=100MHz 60

: 1MHz signal : 20mVrms

❈

(BR)RIR

R

1.0V

C

6.0V

C

9.0V

=10µA16V
VR=10V 50 nA
VR=1.0V, f=1MHz❈ 51.0 76.0 pF
VR=6.0V, f=1MHz 16.0 29.0 pF
VR=9.0V, f=1MHz 9.5 15.5 pF

/ C

1.0V

9.0V

Ratings

min max

4.6 5.8

Unit

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41000 GI IM

No.6515-1/3

SVC224

Interterminal Capacitance, C -- pF

1000

100

C, Q -- V

R

1000

VRF=20mVrms

7

5

3

2

7

5

3

2

Quality factor Q (f=100MHz)

100

7

5

Quality factor, Q

7

5

Interterminal capacitance C (f=1MHz)

3

2

3

2

10

0123

1.04

1.03

1.02

1.01

Capacitance Ratio

1.00

4

5678910

Reverse Voltage, VR -- V

C -- Ta

10

IT02031

VRF=20mVrms
f=1MHz

VR = 3V

4V
6V

8V

0.99

0.98

VR = 8V

6V
4V
3V

--50 --25 0 25 50 75 100 125 150

Ambient Temperature, Ta -- °C

IT02032

No.6515-2/3