SANYO SVC222 Datasheet

Ordering number : ENN6514

Features

•

Guaranteed matching to 4.0% at VR=2V.

•

High Q.

SVC222

Diffused Junction Silicon Diode

SVC222

Varactor Diode for

FM Receiver Electronic Tuning Use

Package Dimensions

unit : mm

1184

[SVC222]

4.0

3.0

0.4

0.5

0.4

1.8

0.6

15.0

2.2

0.4

12

2.6

1 : Anode
2 : Cathode

SANYO : SPA

Specifications

0.7

3.0

3.8nom

0.7

Absolute Maximum Ratings at T a=25°C

Reverse Voltage V
Junction T emperature Tj 125 °C
Storage T emperature T stg −55 to +125 °C

Parameter Symbol Conditions Ratings Unit

R

16 V

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Breakdown Voltage V
Reverse Current I
Interterminal Capacitance C

Quality Factor Q VR=3.0V, f=100MHz 100
Capacitance Ratio CR C
Matching T olerance ∆Cm VR=2.0V, f=1MHz (Cmax − Cmin) / Cmin✕100

(BR)RIR

R

2V

C

8V

=10µA16V
VR=10V 50 nA
VR=2.0V, f=1MHz❈ 20.80 24.80 pF
VR=8.0V, f=1MHz 12.00 15.00 pF

/ C

2.0V

8.0V

Ratings

min max

1.65 1.75

4.0 %

Note : Matching Tolerance is valid for the devices in each taping reel.

❈ : 1MHz signal : 20mVrms

Unit

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41000 GI (IM)

No.6514-1/3

SVC222

Interterminal Capacitance, C -- pF

100

C, Q -- V

7

5

3

R

Quality factor Q (f=100MHz)

VRF=20mVrms

1000

7

5

3

Quality Factor, Q

2

2

Interterminal capacitance C (f=1MHz)

10

0123

1.04

VRF=20mVrms
f=1MHz

1.03

1.02

1.01

Capacitance Ratio

1.00

4

5678910

Reverse Voltage, VR -- V

C -- Ta

100

IT02029

VR = 2V

3V

4V

6V
8V

VR = 8V

0.99

6V
4V

3V
2V

0.98

--50 --25 0 25 50 75 100 125 150

Ambient Temperature, Ta -- °C

IT02030

No.6514-2/3