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Ordering number : ENN6514
Features
•
Guaranteed matching to 4.0% at VR=2V.
•
High Q.
SVC222
Diffused Junction Silicon Diode
SVC222
Varactor Diode for
FM Receiver Electronic Tuning Use
Package Dimensions
unit : mm
1184
[SVC222]
4.0
3.0
0.4
0.5
0.4
1.8
0.6
15.0
2.2
0.4
12
2.6
1 : Anode
2 : Cathode
SANYO : SPA
Specifications
0.7
3.0
3.8nom
0.7
Absolute Maximum Ratings at T a=25°C
Reverse Voltage V
Junction T emperature Tj 125 °C
Storage T emperature T stg −55 to +125 °C
Parameter Symbol Conditions Ratings Unit
R
16 V
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Breakdown Voltage V
Reverse Current I
Interterminal Capacitance C
Quality Factor Q VR=3.0V, f=100MHz 100
Capacitance Ratio CR C
Matching T olerance ∆Cm VR=2.0V, f=1MHz (Cmax − Cmin) / Cmin✕100
(BR)RIR
R
2V
C
8V
=10µA16V
VR=10V 50 nA
VR=2.0V, f=1MHz❈ 20.80 24.80 pF
VR=8.0V, f=1MHz 12.00 15.00 pF
/ C
2.0V
8.0V
Ratings
min max
1.65 1.75
4.0 %
Note : Matching Tolerance is valid for the devices in each taping reel.
❈ : 1MHz signal : 20mVrms
Unit
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41000 GI (IM)
No.6514-1/3
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SVC222
Interterminal Capacitance, C -- pF
100
C, Q -- V
7
5
3
R
Quality factor Q (f=100MHz)
VRF=20mVrms
1000
7
5
3
Quality Factor, Q
2
2
Interterminal capacitance C (f=1MHz)
10
0123
1.04
VRF=20mVrms
f=1MHz
1.03
1.02
1.01
Capacitance Ratio
1.00
4
5678910
Reverse Voltage, VR -- V
C -- Ta
100
IT02029
VR = 2V
3V
4V
6V
8V
VR = 8V
0.99
6V
4V
3V
2V
0.98
--50 --25 0 25 50 75 100 125 150
Ambient Temperature, Ta -- °C
IT02030
No.6514-2/3