SANYO SVC203CP Datasheet

SVC203CP

Ordering number : EN2195F

Varactor Diode for FM Low-Voltage

Electronic Tuning Use

Diffused Junction Type Silicon Diode

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

O0397GI/52595GI (KOTO)1200MO/O268MO/6187AT, TS 8-9952 No.2195-1/3

Features

• Dual type with a good linearity of C-V characteristic. Excels in large input characteristics.

• Small-sized package (CP) usable in ultrasmall-sized sets (surface mount type).

• Applicable to FM wide band due to high capacitance ratio (VR=1.5 to 9V).

Absolute Maximum Ratings at Ta=25°C unit

Reverse Voltage V

R

16 V
Junction Temperature Tj 125 °C
Storage Temperature Tstg –55 to +125 °C

Electrical Characteristics at Ta=25°C min typ max unit

Breakdown Voltage V

(BR)RIR

=1µA 16 V

Reverse Current I

R

VR=10V 50 nA

Interterminal Capacitance* C

1.0V

VR=1.0V, f=1MHz 58.80 65.98 pF

C

6.0V

VR=6.0V, f=1MHz 18.72 25.11 pF

C

9.0V

VR=9.0V, f=1MHz 10.84 13.40 pF
Quality Factor Q VR=3.0V, f=1MHz 60
Capacitance Ratio C

R

C

1.0V/C9.0V

4.6

Matching Tolerance ∆Cm VR=1.0V 6.5 %

VR=6.0V 5.5 %

VR=9.0V 11.8 %
* : Capacitance value of one diode

Electrical Connection

Package Dimensions 1169A

(unit : mm)

(C

max

|C

min

)

C

min

×100

SVC203CP

No.2195-2/3

Address and Capacitance Value (Reference Value)