Specifications
Maximum Ratings at Ta = 25°C
Allowable Operating Ranges at Ta = 25°C
Junction Thermal Resistance
Electrical Characteristics at Tc = 25°C, VCC1 = 36 V, VCC2 = 5 V
Note: With constant voltage power supply.
Internal Equivalent Circuit
No. 4867-2/10
STK6712BMK4
Parameter Symbol Conditions Ratings Unit
Maximum supply voltage 1 V
CC
1 max No input signal 52 V
Maximum supply voltage 2 V
CC
2 max No input signal 7 V
Maximum phase current I
OH
max per phase, R/L = 5 Ω, 10 mH, 0.5 s 1 pulse, VCCinput 2.5 A
Substrate temperature Tc max 105 °C
Junction temperature Tj max 150 °C
Storage temperature Tstg –40 to +125 °C
Repeated avalanche resistance Ear max 38 mJ
Parameter Symbol Conditions Ratings Unit
Supply voltage 1 V
CC
1 With input signal 18 to 42 V
Supply voltage 2 V
CC
2 With input signal 4.75 to 5.25 V
Phase driver voltage resistance V
DSS
(min) 120 V
Phase current I
OH
max Duty 50% (max) 1.7 A
Parameter Symbol Conditions Ratings Unit
Power FET
θj-c 13.5 °C/W
Parameter Symbol Conditions min typ max Unit
Output saturation voltage V
ST
RL = 23 Ω, VIN= 0.8 V 1.1 1.5 V
Output current (average) Io ave R/L = 3.5 Ω/3.8 mH, V
IN
= 0.8 V per phase 0.45 0.50 0.55 A
Pin current dissipation (average) I
CC
2 Load, R = 3.5 Ω, L = 3.8 mH, VIN= 0.8 V per phase 15 25 mA
FET diode voltage Vdf Idf = 1.0 A 1.2 1.8 V
TTL input ON voltage V
IH
Input voltage when F1, 2, 3, 4 ON 2.0 V
TTL input OFF voltage V
IL
Input voltage when F1, 2, 3, 4 OFF 0.8 V
Switching time
t
ON
RL= 24 Ω, VIN= 0.8 V 100 ns
t
OFF
RL= 24 Ω, VIN= 0.8 V 0.2 µs