SANYO SPI-336-99-T1 Datasheet

Ordering number : EN6030

SPI-336-99-T1

Ultraminiature photoreflector supporting reflow soldering

(Single transistor type)

Features

• Infrared LED plus Phototransistor (single)

• DIP type

• Compact type : 3.4 (L) ✕ 2.7 (W) ✕ 1.5 (H) mm

• Visible light cut type

• Taping type

Absolute Maximum Ratings at Ta=25°C, 65%RH (as per JIS C7032)

Parameter Symbol Rating Unit

Input LED

Output
Phototransistor

Forward Current I
Reverse Voltage V
Power Dissipation P
Collector-Emitter Voltage V
Emitter-Collector Voltage V
Collector Curren I
Power Dissipation P

Operating Temperature Topr --20 to +80 °C

Storage Temperature Tstg --30 to +100 °C

F

R

D
CEO
ECO

C

C

Infrared LED

SPI-336-99-T1

50 mA

5V
70 mW
20 V

5V
20 mA
70 mW

Electro-Optical Characteristics at Ta=25°C, 65%RH

Parameter Symbol Condition Min. Typ. Max. Unit

Input
Output Dark Current I

Forward Voltage V
Reverse Current I

CEO

Collector Output I

Coupled

Leakage Current I
Collector Emitter VCE(sat) IF=10mA, IC=50µA -- -- 0.5 V

LEAKIF

Rise Time tr
Fall Time tf

1

*

Location of reflector is shown in Fig. 1.

2

*

No reflector

3

*

Table of Classification of Collector Output

Class A B C D

Ic (µA) 1100 to 450 600 to 260 350 to 150 200 to 80

IF=10mA 1.0 1.2 1.6 V

F

VR= 5 V -- -- 1 0 µ A

R

IF=0mA, VCE=10V -- -- 200 nA
IF=10mA, VCE=5V

C

=10mA, VCE=5V

VCC=5V, RL=100Ω
IC=1mA

1

*

2

*

80 - - 1100 µA

-- -- 1 µA

-- 5 -- µs

-- 5 -- µs

Fig. 1 Location of Reflector

AL V .E. film

Glass plate (t=1mm)

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72199 GI, (MI

)

No.6030 1/6

SPI-336-99-T1

Typical Characteristics

CAUTION

These numerical value show the electrical and optical characteristics of this product, and not assure this contents.

Forward Current vs. Ambient Temperature

60

50

(mA)Collector Current I

40

F

30

20

Forward Current I

10

0

--25 0 25 50 75 100

Ambient Temperature Ta (°C)

Forward Current vs. Forward Voltage

500

Ta=75°C

50°C
25°C

0°C

--25°C

(mA)

F

100

50

Power Dissipation vs. Ambient Temperature

(Rating) (Rating)

120

100

80

60

40

Power Dissipation P (mW)Relative Collector Current (%)

20

0

--25 0 25 50 75 100

Ambient Temperature Ta (°C)

Collector vs. Forward Current

500

V

=5V

CE

Ta=25°C

400

(µA)

C

300

10

Forward Current I

5

1

0 0.5 1 1.5 2

Forward Voltage VF (V)

Collector Current vs. Collector-emitter Voltage

1000

Ta=25°C

800

(µA)

C

600

400

200

0

0510

Collector-emitter Voltage VCE (V)

IF=20mA

15mA

10mA

5mA

200

Collector Current I

100

0

048121620

Forward Current IF (mA)

Relative Collector Current vs. Ambient Temperature

140

IF=10mA
VCE=5V

120

100

80

60

40

--25 0 25 50 75 100

Ambient Temperature Ta (°C)

No.6030 2/6