SANYO SPI-236-17 Datasheet

Ordering number : EN6025

SPI-236-17

Ultraminiature photointerrupter

(single-transistor type)

Features

• GaAs Infrared LED plus Single Phototransistor

• Photo-Interrupter

• Contact type

• Compact type : H3.25 ✕ L5.0 ✕ W4.5mm

• Application : For the general public welfare

Absolute Maximum Ratings at Ta=25°C, 65%RH (as per JIS C 7032 )

Parameter Symbol Rating Unit

1

Forward Current

Input LED

Reverse Voltage V
Power Dissipation P
Collector-Emitter Voltage V

Output
Phototransistor

Emitter-Collector Voltage V
Collector Curren I
Power Dissipation P

Operating Temperature Topr --20 to +80 °C

Storage Temperature Tstg --30 to +85 °C

Soldering T emperature

1

*

See forward current derating

2

*

Soldering conditions : time : max. 3sec; clearance : min. 1mm from lower stay

*

2

*

I

F

R

D
CEO
ECO

C

C

T sol 260 °C

GaAs Infrared LED

SPI-236-17

50 mA

5V
70 mW
20 V

5V
20 mA
70 mW

Electro-Optical Characteristics at Ta=25°C, 65%RH

Parameter Symbol Condition Min. Typ. Max. Unit

Input

Forward Voltage V
Reverse Current I

Output Dark Current I

Collector Output Current I

Coupled

Collector Emitter
Saturation Voltage

Rise Time tr
Fall Time tf

1

*

Measurement Circuit of Collector Current

2

*

Table of Classification of Collector Output

CEO

VCE(sat) IF=10mA, IC=50µA -- -- 0.5 V

IF=10mA 1.0 1.15 1.4 V

F

VR= 5 V -- -- 1 0 µ A

R

IF=0mA, VCE=10V -- 10 200 nA
IF=10mA, VCE=5V

C

VCC=5V, RL=100Ω
IC=1mA

IF=10mA

Class A B C

Ic (µA) 880 to 460 635 to 330 460 to 240

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, T aito-ku, TOKYO, 110-8534 JAPAN

1

*

240 500 880 µA

-- 5 -- µs

-- 5 -- µs

VCE=5V

Ic

A

72199 GI, (MI

)

No.6025 1/6

SPI-236-17

Typical Characteristics

CAUTION

These numerical value show the electrical and optical characteristics of this product, and not assure this contents.

Forward Current vs. Ambient Temperature

60

50

(mA)Collector Current I

40

F

30

20

Forward Current I

10

0

--25 0 25 50 75 100

Ambient Temperature Ta (°C)

Forward Current vs. Forward Voltage

500

Ta=75°C

50°C
25°C

0°C

--25°C

(mA)

F

100

50

10

(Rating)

Power Dissipation vs. Ambient Temperature

120

100

80

60

40

Power Dissipation P (mW)Relative Collector Current (%)

20

0

--25 0 25 50 75 100

Ambient Temperature Ta (°C)

(Rating)

Collector vs. Forward Current

1000

VCE=5V
Ta=25°C

800

(µA)

C

600

400

5

Forward Current I

1

0 0.5 1 1.5 2

Forward Voltage VF (V)

Collector Current vs. Collector-emitter Voltage

1000

Ta=25°C

800

(µA)

C

600

400

200

0

0510

Collector-emitter Voltage VCE (V)

IF=15mA

10mA

5mA

Collector Current I

200

0

048121620

Forward Current IF (mA)

Relative Collector Current vs. Ambient Temperature

140

IF=10mA
VCE=5V

120

100

80

60

40

--25 0 25 50 75 100

Ambient Temperature Ta (°C)

No.6025 2/6