SANYO SPA13003 User Manual

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Ordering number : ENA1402

SANYO Semiconductors

SPA13003

DATA SHEET

SPA13003
(13003 series)

NPN Triple Diffused Planar Silicon Transistor

Switching Regulator Applications

Features

• High breakdown voltage.

• High-speed switching.

• Wide ASO.

• Adoption of MBIT process.

Specifi cations

Absolute Maximum Ratings

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage V

Collector-to-Emitter Voltage V

Collector-to-Emitter Voltage V

Emitter-to-Base Voltage V

Collector Current I

Collector Current (Pulse) I

Base Current I

Collector Dissipation P

Junction Temperature Tj 150

Storage Temperature Tstg -55 to +150

at Ta=25°C

CBO

CES

CEO

EBO

C

CP

B

C

PW≤300μs, duty cycle≤10% 2 A

700 V

700 V

400 V

8V

1A

0.5 A

0.6 W

C

°

C

°

Electrical Characteristics

Parameter Symbol Conditions

Collector Cutoff Current I

Emitter Cutoff Current I

DC Current Gain

Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.

at T a=25°C

CBO

EBO

hFE1V

hFE2V

hFE3V

Ratings

min typ max

VCB=400V, IE=0A 10

VEB=5V, IC=0A 10

=5V, IC=0.1A 15 35

CE

=5V, IC=0.5A 5

CE

=5V, IC=1mA 7

CE

Unit

μ

μ

A

A

www.semiconductor-sanyo.com/network

21209CB MS IM TC-00001819

No. A1402-1/4

SPA13003

4.0

2.2

0.7

Continued from preceding page.

Parameter Symbol Conditions

Gain-Bandwidth Product f

Output Capacitance Cob VCB=10V, f=1MHz 10 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=0.5A, IB=0.1A 0.8 V

Base-to-Emitter Saturation Voltage VBE(sat) IC=0.5A, IB=0.1A 0.5 V

Collector-to-Base Breakdown Voltage V

Collector-to-Emitter Breakdown Voltage V

Collector-to-Emitter Breakdown Voltage V

Emitter-to-Base Breakdown Voltage V

Turn-On Time t

Storage Time t

Fall Time t

T

(BR)CBOIC

(BR)CESIC

(BR)CEOIC

(BR)EBOIE

on

stg

f

VCE=10V, IC=0.1A 20 MHz

=1mA, IE=0A 700 V

=100μA, RBE=0

=5mA, RBE=

=1mA, IC=0A 8 V

IC=0.5A, IB1=0.05A, IB2=-0.5A, RL=400Ω, VCC=200V

IC=0.5A, IB1=0.05A, IB2=-0.5A, RL=400Ω, VCC=200V

IC=0.5A, IB1=0.05A, IB2=-0.5A, RL=400Ω, VCC=200V

Ω

∞

min typ max

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7524-004

PW=20μs
D.C.≤1%

I

B1

I

B2

Ratings

700 V

400 V

1.0

1.0

0.3

OUTPUT

Unit

μ

μ

μ

s

s

s

0.4

0.5

0.4

123

1.3

3.0

3.8

1.3

INPUT

3.0

1.8

0.6

0.4

15.0

V

50Ω

R

B

R

100μF 470μF

R

L

++

VCC=200VVBE= --5V

1 : Emitter

0.7

2 : Collector
3 : Base

SANYO : SPA

I

-- V

C

80mA

1.0

200mA

0.8

-- A
C

0.6

0.4

Collector Current, I

0.2

0

0

90mA

1.00.5 2.0 3.0 4.01.5 2.5 3.5 4.5

Collector-to-Emitter Voltage, VCE -- V

150mA

70mA

CE

60mA

1.0

VCE=5V

0.9

100mA

50mA

40mA

30mA

20mA

10mA

IB=0mA

5.0

IT13700 IT13701

0.8

0.7

-- A
C

0.6

0.5

0.4

0.3

Collector Current, I

0.2

0.1
0

0.2 0.4 0.6 0.8 1.00 1.2

Base-to-Emitter Voltage, VBE -- V

IC -- V

Ta=120

BE

C

°

25°C

C

°

--40

No. A1402-2/4

h

-- I

FE

7

5

3

2

Ta=120

25

C

°

C

°

FE

C

--40°C

10

7

DC Current Gain, h

5

3

2

2 3 57 2 3 57 2 3 57

0.001 0.01 0.1 1.0

Collector Current, IC -- A

3

2

-- pF

10

7

5

Output Capacitance, Cob

3

2

1.0 10 100

23 57 23 75

Cob -- V

Collector-to-Base Voltage, V

3

2

VBE(sat) -- I

CB

CB

C

(sat) -- V

BE

1.0

7

5

Base-to-Emitter

Saturation Voltage, V

3

0.01

C

°

Ta= --40

C

°

25

120

3257

C

°

23 5

0.1

Collector Current, IC -- A

5

3

ICP=2A

2

IC=1A

1.0
7
5

-- A

3

C

2

0.1
7
5

3
2

0.01

Collector Current, I

7
5

3

Ta=25°C

2

Single pulse

0.001

0.1 1.0

Forward Bias A S O

DC operation

35722

357 2

10

10ms

357 23 57

Collector-to-Emitter Voltage, VCE -- V

VCE=0.7V

f=1MHz

-- V

IC / IB=5

100μs

300μs

1ms

100

SPA13003

IT13702

IT13704

7

1.0

IT13706

IT14369

h

-- I

25

--40

FE

C

°

C

°

C

°

7

5

Ta=120

3

FE

2

10

DC Current Gain, h

7

5

3

2 3 57 2 3 57 2 3 57

0.001 0.01 0.1 1.0

C

Collector Current, IC -- A

7

5

3

2

(sat) -- V

1.0

CE

7

5

3

2

0.1

Collector-to-Emitter

Saturation Voltage, V

7

5

3

0.01

VCE(sat) -- I

Ta=120

23 57

0.1

C

C

°

25

C

°

C

°

--40

23 57

Collector Current, IC -- A

1.0

7

5

3

2

0.1

Switching Time, SW Time -- μs

7

5

0.1

SW Time -- I

t

stg

23 7

C

t

f

5

Collector Current, IC -- A

3

2

1.0

7

5

-- A
C

3

2

0.1

7

5

Collector Current, I

3

2

0.01
100

Reverse Bias A S O

23 57

Collector-to-Emitter Voltage, VCE -- V

VCE=5V

IT13703

IC / IB=5

IT13705

IC / IB1=10
I
R Load

B2 / IB1

=10

IT13707

L=500μH
IB2= --0.2A
Ta=25°C
Single pulse

IT14417

1.0

1.0

1000

No. A1402-3/4

0.7

0.6

0.5

-- W
C

0.4

0.3

0.2

Collector Dissipation, P

0.1

0

2006040 80 100 120 140 160

Ambient Temperature, Ta -- °C

SPA13003

P

-- Ta

C

IT14370

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.

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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be
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party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.

This catalog provides information as of February, 2009. Specifi cations and information herein are subject
to change without notice.

No. A1402-4/4

PS