Sanyo SGF31 Specifications

Sanyo SGF31 Specifications

Ordering number : ENN7055B

SGF31

N-Channel GaAs MESFET

SGF31

For C to Ku-band Local Oscillator and Amplifier

Features

Package Dimensions

Lower phase noise.

The chip surface is covered with the highly reliable protection film.

Super miniaturized plastic-mold package (CP4).

Automatic surface mounting is available.

Specifications

Absolute Maximum Ratings at Ta=25°C

unit : mm

2134A

[SGF31]

1.9

 

 

 

0.95

0.95

0.5

 

 

0.4

 

 

0.16

4

3

 

 

 

 

 

 

 

0 to 0.1

 

 

1.5

2.5

 

1

2

 

 

 

 

0.6

0.5

1

: Gate

0.95

0.85

 

2.9

 

2

: Source

 

 

 

3

: Drain

 

 

 

4

: Source

 

0.8

1.1

SANYO : CP4

 

 

 

Parameter

Symbol

Conditions

 

 

Ratings

 

Unit

Drain-to-Source Voltage

VDS

 

 

 

 

 

6

V

Gate-to-Source Voltage

VGS

 

 

 

 

 

--5

V

Drain Current

ID

 

 

 

 

 

100

mA

Allowable Power Dissipation

PD

 

 

 

 

 

200

mW

Junction Temperature

Tj

 

 

 

 

 

150

°C

Storage Temperature

Tstg

 

 

 

--55 to +150

°C

Electrical Characteristics at Ta=25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parameter

Symbol

Conditions

 

 

Ratings

 

Unit

 

 

 

 

 

min

typ

 

max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate-to-Source Leakage Current

IGSO

VGS=--5V

 

 

 

 

--10

mA

Saturated Drain Current

IDSS

VDS=3V, VGS=0

30

50

 

70

mA

Gate-to-Source Cutoff Voltage

VGS(off)

VDS=3V, ID=100mA

--0.5

--1.6

 

--2.7

V

Forward Transfer Admittance

½yfs½

VDS=3V, ID=10mA

 

 

34

 

 

mS

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71502 TS IM / 11802 GI IM / 91001 GI IM No.7055-1/5

SGF31

S-Parameter

SGF31

VDS=3V IDS=30mA

FREQUENCY

 

S11

 

 

 

 

S21

 

 

 

 

S12

 

 

 

S22

 

MHz

MAG

 

ANG

 

MAG

 

 

ANG

 

 

MAG

 

 

ANG

 

MAG

 

 

ANG

3000.0000

.671

 

--120.6

 

2.964

 

81.8

 

 

.098

 

 

34.1

 

.514

 

 

--39.1

4000.0000

.585

 

--148.0

 

2.559

 

61.8

 

 

.104

 

 

31.2

 

.441

 

 

--52.3

5000.0000

.552

 

--173.3

 

2.276

 

43.0

 

 

.114

 

 

27.9

 

.389

 

 

--66.5

6000.0000

.550

 

163.0

 

2.044

 

24.7

 

 

.131

 

 

23.5

 

.342

 

 

--82.7

7000.0000

.573

 

141.4

 

1.850

 

6.8

 

 

.154

 

 

16.7

 

.299

 

 

--102.3

8000.0000

.611

 

122.0

 

1.686

 

--10.6

 

 

.178

 

 

7.6

 

.261

 

 

--126.3

9000.0000

.656

 

104.6

 

1.541

 

--27.6

 

 

.200

 

 

--2.5

 

.236

 

 

--155.4

10000.0000

.702

 

88.9

 

1.408

 

--44.2

 

 

.220

 

 

--13.0

 

.235

 

 

172.0

11000.0000

.747

 

74.5

 

1.284

 

--60.3

 

 

.240

 

 

--23.7

 

.263

 

 

140.4

12000.0000

.789

 

61.1

 

1.167

 

--76.1

 

 

.260

 

 

--35.0

 

.316

 

 

113.3

13000.0000

.827

 

48.4

 

1.058

 

--91.6

 

 

.277

 

 

--47.0

 

.384

 

 

90.7

14000.0000

.858

 

35.8

 

.954

 

--107.0

 

 

.289

 

 

--59.5

 

.457

 

 

71.4

15000.0000

.883

 

23.4

 

.848

 

--122.3

 

 

.296

 

 

--72.0

 

.533

 

 

54.1

16000.0000

.905

 

11.5

 

.716

 

--137.8

 

 

.299

 

 

--83.6

 

.625

 

 

37.8

SGF31

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDS=3V IDS=30mA

FREQUENCY

GUmax

 

GAmax

 

½S21½^2

 

½S12½^2

 

K

 

Delay

 

Mason’s U

G1

 

G2

MHz

dB

 

dB

 

 

dB

 

 

dB

 

 

 

 

 

nsec

 

dB

dB

 

dB

3000.0000

13.37

 

 

 

9.44

 

 

--20.21

 

 

 

.81

 

.057

 

20.258

2.60

 

 

1.33

4000.0000

10.93

12.95

 

8.16

 

 

--19.66

 

 

 

1.02

 

.054

 

18.447

1.82

 

 

.94

5000.0000

9.43

10.83

 

7.15

 

 

--18.87

 

 

 

1.13

 

.052

 

17.436

1.58

 

 

.71

6000.0000

8.32

9.79

 

6.21

 

 

--17.66

 

 

 

1.12

 

.051

 

17.386

1.56

 

 

.54

7000.0000

7.48

9.39

 

5.34

 

 

--16.27

 

 

 

1.05

 

.049

 

18.673

1.73

 

 

.41

8000.0000

6.87

 

 

 

4.54

 

 

--15.01

 

 

 

.97

 

.048

 

23.592

2.03

 

 

.31

9000.0000

6.45

 

 

 

3.76

 

 

--13.99

 

 

 

.88

 

.047

 

 

 

2.44

 

 

.25

10000.0000

6.17

 

 

 

2.97

 

 

--13.14

 

 

 

.80

 

.046

 

 

 

2.95

 

 

.25

11000.0000

6.02

 

 

 

2.17

 

 

--12.39

 

 

 

.73

 

.044

 

 

 

3.54

 

 

.31

12000.0000

6.03

 

 

 

1.34

 

 

--11.70

 

 

 

.65

 

.044

 

 

 

4.22

 

 

.46

13000.0000

6.17

 

 

 

.49

 

 

--11.14

 

 

 

.57

 

.043

 

 

 

4.99

 

 

.69

14000.0000

6.40

 

 

 

--.41

 

 

--10.77

 

 

 

.49

 

.043

 

 

 

5.79

 

 

1.02

15000.0000

6.57

 

 

 

--1.43

 

 

--10.58

 

 

 

.43

 

.043

 

 

 

6.55

 

 

1.45

16000.0000

6.68

 

 

 

--2.90

 

 

--10.50

 

 

 

.36

 

.043

 

 

 

7.43

 

 

2.15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

No.7055-2/5

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