Ordering number : ENN7054B
SGF29
N-Channel GaAs MESFET
SGF29
For C to Ku-band Local Oscillator and Amplifier
Features
•
Lowest phase noise.
•
The chip surface is covered with the highly reliable
protection film.
•
Super miniaturized plastic-mold package (CP4).
•
Automatic surface mounting is available.
Package Dimensions
unit : mm
2134A
1.9
0.95
0.4
0.95
43
1
0.95
0.85
2.9
[SGF29]
2
0.6
0.8
0.5
1.5
0.5
1.1
0.16
0 to 0.1
2.5
1 : Gate
2 : Source
3 : Drain
4 : Source
SANYO : CP4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current I
Allowable Power Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +150 °C
DS
GS
D
D
6V
--5 V
100 mA
200 mW
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Gate-to-Source Leakage Current I
Saturated Drain Current I
Gate-to-Source Cutoff Voltage VGS(off) VDS=3V, ID=100µA --0.5 --1.4 --2.5 V
Forward Transfer Admittance
GSO
DSS
yfs
VGS=--5V --10 µA
VDS=3V, VGS=0 30 50 70 mA
VDS=3V, ID=10mA 44 mS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71502 TS IM / 11802 GI IM / 91001 GI IM
No.7054-1/5
Unit
SGF29
S-Parameter
SGF29
FREQUENCY S11 S21 S12 S22
MHz MAG ANG MAG ANG MAG ANG MAG ANG
3000.0000 .605 -139.1 3.198 72.5 .103 31.6 .431 --43.5
4000.0000 .546 --167.5 2.686 53.3 .114 28.7 .352 --57.1
5000.0000 .535 167.9 2.338 35.2 .127 24.2 .296 --72.1
6000.0000 .551 145.9 2.060 17.6 .146 18.5 .245 --90.5
7000.0000 .585 126.4 1.834 .4 .169 10.6 .201 --114.8
8000.0000 .630 109.1 1.649 --16..4 .192 1.1 .172 --147.1
9000.0000 .677 93.6 1.491 --32.7 .212 --9.2 .171 174.9
10000.0000 .723 79.4 1.350 --48.5 .230 --19.7 .204 140.1
11000.0000 .765 66.4 1.222 --63.9 .247 --30.3 .260 113.0
12000.0000 .803 54.2 1.106 --78.8 263 --41.4 .328 91.7
13000.0000 .837 42.5 .999 --93.4 .276 --53.0 .401 73.9
14000.0000 .865 30.9 .899 --107.9 .285 --65.0 .474 58.2
15000.0000 .887 19.4 .800 --122.3 .288 --76.8 .545 43.8
16000.0000 .908 8.4 .675 --136.6 .288 --87.6 .633 30.1
VDS=3V IDS=30mA
SGF29
VDS=3V IDS=30mA
FREQUENCY GUmax GAmax S21^2 S12^2 K Delay Mason’s U G1 G2
MHz dB dB dB dB nsec dB dB dB
3000.0000 12.97 10.10 --19.73 .87 .055 21.072 1.98 .89
4000.0000 10.70 12.48 8.58 --18.85 1.04 .052 19.171 1.54 .58
5000.0000 9.24 10.57 7.38 --17.90 1.12 .050 17.886 1.46 .40
6000.0000 8.12 9.47 6.28 --16.70 1.11 .049 17.431 1.57 .27
7000.0000 7.27 8.93 5.27 --15.44 1.05 .048 18.036 1.82 .18
8000.0000 6.67 4.34 --14.35 .98 .046 20.510 2.19 .13
9000.0000 6.26 3.47 --13.47 .91 .045 2.66 .13
10000.0000 6.00 2.61 --12.76 .85 .044 3.21 .18
11000.0000 5.86 1.74 --12.14 .78 .042 3.82 .30
12000.0000 5.87 .87 --11.60 .71 .041 4.50 .49
13000.0000 6.00 --.01 --11.17 .63 .041 5.24 .76
14000.0000 6.18 --.92 --10.91 .56 .040 6.00 1.10
15000.0000 6.31 --1.94 --10.81 .50 .040 6.72 1.53
16000.0000 6.38 --3.41 --10.81 .44 .040 7.56 2.22
No.7054-2/5