Sanyo SBS806M Specifications
Ordering number : ENN7029
SBS806M
Schottky Barrier Diode
SBS806M
30V, 0.5A Rectifier
Applications
•
High frequency rectification (switching regulators,
converters, choppers).
Features
•
Low forward voltage (IF=0.3A, VF max=0.4V)
(IF=0.5A, VF max=0.47V).
•
Composite type with 2 low VF SBDs in one package,
facilitating high-density mounting.
•
The SBS806M is composed of 2 chips that are
equivalent to the SBS006.
•
Ultrasmall package facilitates miniaturization in end
products.
Specifications
Package Dimensions
unit : mm
1310
[SBS806M]
2.0
0.3
5
132
0.07
54
0.85
123
(Top view)
2.1
0.250.25
1.6
4
0.65
(Bottom view)
0.15
1 : Anode (Diode 1)
2 : No Contact
3 : Anode (Diode 2)
4 : Cathode (Diode 2)
5 : Cathode (Diode 1)
SANYO : MCPH5
Absolute Maximum Ratings at T a=25°C(Value per element)
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage V
Nonrepetitive Peak Reverse Surge Voltage V
Average Output Current I
Surge Forward Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C
RRM
RSM
O
FSM
50Hz sine wave, 1 cycle 10 A
30 V
30 V
0.5 A
Electrical Characteristics at T a=25°C (Value per element)
Parameter Symbol Conditions
Reverse Voltage V
Forward Voltage
Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 20 pF
Reverse Recovery Time t
Thermal Resistance Rchj-a
Marking : SA
VF1I
VF2I
R
rr
IR=0.5mA 30 V
R
=0.3A 0.35 0.40 V
F
=0.5A 0.42 0.47 V
F
VR=10V 200 µA
IF=IR=100mA, See specified Test Circuit. 10 ns
Mounted on a ceramic board (600mm2✕0.8mm)
min typ max
Ratings
110 °C / W
Since this device is a low-VF SBD, the IR is large. It is inclined to break due to thermal
Caution! runaway caused by reverse loss in case of severe conditions such as high temperature / voltage.
Please make a safe design taking heat dissipation into consideration.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
73001 GI IM
No.7029-1/3
SBS806M
Electrical Connection trr Test Circuit
5
123
10
7
5
3
2
-- A
1.0
F
7
5
3
100°C
2
0.1
7
Forward Current, I
5
3
2
0.01
0
0.4
(1)Rectangular wave θ=60°
-- W
(2)Rectangular wave θ=120°
0.35
(3)Rectangular wave θ=180°
F(AV)
(4)Sine wave θ=180°
0.3
0.25
4
1 : Anode
2 : No Contact
3 : Anode
4 : Cathode
5 : Cathode
(Top view)
I
-- V
F
Ta=125°C
25°C
50°C
75°C
Forward Voltage, V
P
F(AV)
(1)
F
-- I
0.6
F
O
(2)
-- V
(4)
Duty≤10%
100mA100mA
10µs
0.80.4 1.00.2
IT00632
(3)
50Ω 100Ω 10Ω
--5V
100
7
5
3
2
10
7
Ta=125°C
-- mA
5
3
R
2
1.0
7
5
3
2
0.1
Reverse Current, I
7
5
3
2
0.01
0
100°C
50°C
Reverse Voltage, V
100
7
5
-- pF
3
2
I
R
75°C
25°C
C -- V
-- V
R
R
R
t
-- V
10mA
rr
3015 2552010
IT00633
f=1MHz
0.2
0.15
0.1
0.05
0
Average Forward Power Dissipation, P
0
0.1 0.2 0.3 0.4
12
10
-- A
8
(Peak)
S
6
4
2
Surge Forward Current, I
0
7
0.01
Sine wave
Average Forward Current, I
I
-- t
S
Current waveform 50Hz sine wave
I
S
23 7
52 237
0.1
Time, t -- s
Rectangular wave
θ
360°
180°
360°
0.5 0.6 0.7
-- A
O
20ms
t
5
1.0
10
7
5
3
2
Interterminal Capacitance, C
1.0
IT00634 IT00635
3
IT00636
1.0 10
2
357 2357
Reverse Voltage, VR -- V
No.7029-2/3
100
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