Sanyo SBS805 Specifications

Ordering number : ENN6944A

SBS805

Schottky Barrier Diode

SBS805

30V, 1A Rectifier

Applications

•

High frequency rectification (switching regulators,
converters, choppers).

Features

•

Low forward voltage (IF=0.5A, VF max=0.40V)
(IF=1.0A, VF max=0.47V).

• Short reverse recovery time(t

• Composite type with 2 low V

max.=15ns).

rr

SBDs in one package,

F

facilitating high-density mounting.

• The SBS805 is composed of 2 chips that are

equivalent to the SBS005.

Electrical Connection

4

35

1 : Cathode
2 : Cathode
3 : Anode

12

4 : No Contact
5 : Anode

Package Dimensions

unit : mm

1294

[SBS805]

2.9

345

2.8

1.6 0.60.6

12

0.40.95

0.2

0.9

0.7

0.4

0.15

0.05

1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode

SANYO : CPH5

0.2

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage V
Nonrepetitive Peak Reverse Surge Voltage V
Average Output Current I
Surge Forward Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C

Marking : SD

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

RRM
RSM

O

FSM

50Hz sine wave, 1 cycle 10 A

30 V
30 V

1A

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N0901 GI IM / 31901GI IM

No.6944-1/3

Electrical Characteristics at Ta=25°C

SBS805

Parameter Symbol Conditions
Reverse Voltage V
Forward Voltage
Reverse Current I

Interterminal Capacitance C VR=10V, f=1MHz 35 pF
Reverse Recovery Time t
Thermal Resistance Rth(j-a) Mounted on a ceramic board (600mm2✕0.8mm) 110 °C/W

VF1I
VF2I

R

rr

IR=1mA 30 V

R

=0.5A 0.35 0.40 V

F

=1A 0.42 0.47 V

F

VR=15V 500 µA

IF=IR=100mA, See specified Test Circuit. 15 ns

Ratings

min typ max

trr Test Circuit

Duty≤10%

50Ω 100Ω 10Ω

10µs

5V

100mA100mA

10mA

t

rr

Unit

10

7
5

3
2

-- A

1.0

F

7
5

3
2

0.1
7

Forward Current, I

5
3

2

Ta=125°C

100°C

75°C

0.01
0

1.0

(1)Rectangular wave θ=60°

-- W

0.9

(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°

(AV)

0.8

F

(4)Sine wave θ=180°

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

Average Forward Power Dissipation, P

0

50°C

0.2 0.4 0.6 0.8

Average Forward Current, I

I

-- V

F

25°C

0.3 0.4 0.50.1 0.2

Forward Voltage, V

PF(AV) -- I

(1)

Sine wave

F

-- V

F

O

(4)

(2)

Rectangular wave

180°

360°

1.0 1.2 1.4

-- A

O

(3)

θ

360°

IT00627

IT00629

0.6

100

7
5

3
2

10

7
5

-- mA

3

R

2

1.0
7
5

3
2

0.1

Reverse Current, I

7
5

3
2

0.01
0

Ta=125°C

Reverse Voltage, V

1000

7
5

3

-- pF

2

100

7
5

3
2

10

7
5

3

Interterminal Capacitance, C

2

1.0

1.0 10

2

357 2357

Reverse Voltage, VR -- V

I

-- V

R

100°C

75°C

50°C

25°C

C -- V

R

3015 2552010

IT00628

R

-- V

R

f=1MHz

100

IT00630

No.6944-2/3