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Ordering number : ENN6944A
SBS805
Schottky Barrier Diode
SBS805
30V, 1A Rectifier
Applications
•
High frequency rectification (switching regulators,
converters, choppers).
Features
•
Low forward voltage (IF=0.5A, VF max=0.40V)
(IF=1.0A, VF max=0.47V).
• Short reverse recovery time(t
• Composite type with 2 low V
max.=15ns).
rr
SBDs in one package,
F
facilitating high-density mounting.
• The SBS805 is composed of 2 chips that are
equivalent to the SBS005.
Electrical Connection
4
35
1 : Cathode
2 : Cathode
3 : Anode
12
4 : No Contact
5 : Anode
Package Dimensions
unit : mm
1294
[SBS805]
2.9
345
2.8
1.6 0.60.6
12
0.40.95
0.2
0.9
0.7
0.4
0.15
0.05
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
SANYO : CPH5
0.2
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage V
Nonrepetitive Peak Reverse Surge Voltage V
Average Output Current I
Surge Forward Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C
Marking : SD
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
RRM
RSM
O
FSM
50Hz sine wave, 1 cycle 10 A
30 V
30 V
1A
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0901 GI IM / 31901GI IM
No.6944-1/3
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Electrical Characteristics at Ta=25°C
SBS805
Parameter Symbol Conditions
Reverse Voltage V
Forward Voltage
Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 35 pF
Reverse Recovery Time t
Thermal Resistance Rth(j-a) Mounted on a ceramic board (600mm2✕0.8mm) 110 °C/W
VF1I
VF2I
R
rr
IR=1mA 30 V
R
=0.5A 0.35 0.40 V
F
=1A 0.42 0.47 V
F
VR=15V 500 µA
IF=IR=100mA, See specified Test Circuit. 15 ns
Ratings
min typ max
trr Test Circuit
Duty≤10%
50Ω 100Ω 10Ω
10µs
5V
100mA100mA
10mA
t
rr
Unit
10
7
5
3
2
-- A
1.0
F
7
5
3
2
0.1
7
Forward Current, I
5
3
2
Ta=125°C
100°C
75°C
0.01
0
1.0
(1)Rectangular wave θ=60°
-- W
0.9
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(AV)
0.8
F
(4)Sine wave θ=180°
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Average Forward Power Dissipation, P
0
50°C
0.2 0.4 0.6 0.8
Average Forward Current, I
I
-- V
F
25°C
0.3 0.4 0.50.1 0.2
Forward Voltage, V
PF(AV) -- I
(1)
Sine wave
F
-- V
F
O
(4)
(2)
Rectangular wave
180°
360°
1.0 1.2 1.4
-- A
O
(3)
θ
360°
IT00627
IT00629
0.6
100
7
5
3
2
10
7
5
-- mA
3
R
2
1.0
7
5
3
2
0.1
Reverse Current, I
7
5
3
2
0.01
0
Ta=125°C
Reverse Voltage, V
1000
7
5
3
-- pF
2
100
7
5
3
2
10
7
5
3
Interterminal Capacitance, C
2
1.0
1.0 10
2
357 2357
Reverse Voltage, VR -- V
I
-- V
R
100°C
75°C
50°C
25°C
C -- V
R
3015 2552010
IT00628
R
-- V
R
f=1MHz
100
IT00630
No.6944-2/3