SANYO SBS804 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6595
SBS804
Schottky Barrier Diode
SBS804
15V, 1A Rectifier
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Low forward voltage (IF=0.5A, VF max=0.35V) (IF=1.0A, VF max=0.4V).
Short reverse recovery time(t
Composite type with 2 low VF SBDs in one package,
max.=15ns).
rr
facilitating high-density mounting.
The SBS804 is composed of 2 chips that are
equivalent to the SBS004.
Electrical Connection
4
35
1 : Cathode 2 : Cathode 3 : Anode
12
4 : No Contact 5 : Anode
Package Dimensions
unit : mm
1294
[SBS804]
2.9
345
1.6 0.60.6
12
0.40.95
0.2
0.7
0.4
0.9
2.8
0.15
0.05
1 : Cathode 2 : Cathode 3 : Anode 4 : No Contact 5 : Anode
SANYO : CPH5
0.2
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage V Nonrepetitive Peak Reverse Surge Voltage V Average Output Current I Surge Forward Current I Junction T emperature Tj --55 to +125 °C Storage T emperature T stg --55 to +125 °C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
RRM RSM
O
FSM
50Hz sine wave, 1 cycle 10 A
15 V 15 V
1A
63000 GI IM
No.6595-1/3
Electrical Characteristics at Ta=25°C
SBS804
Parameter Symbol Conditions Reverse Voltage V Forward Voltage Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 42 pF Reverse Recovery Time t Therminal Resistance Rth(j-a) Mounted on a ceramic board (600mm2✕0.8mm) 110 °C/W
Marking : SC
VF1I VF2I
R
rr
IR=1mA 15 V
R
=0.5A 0.30 0.35 V
F
=1A 0.35 0.40 V
F
VR=6V 500 µA
IF=IR=100mA, See specified Test Circuit. 15 ns
Ratings
min typ max
Switching Time Test Circuit
Duty10%
50 100 10
10µs
5V
100mA100mA
10mA
t
rr
Unit
10
7 5
3 2
-- A
1.0
F
7 5
3 2
0.1 7
Forward Current, I
5 3
2
0.01 0
0.8
-- W
0.7
(AV)
F
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Average Forward Power Dissipation, P
100°C
qRectangular wave θ=60° wRectangular wave θ=120° eRectangular wave θ=180° rSine wave θ=180°
0.2 0.4 0.6 0.8
I
-- V
F
F
Ta=125°C
25°C
50°C
75°C
0.3 0.4 0.50.1 0.2
Forward Voltage, V
PF(AV) -- I
q
F
O
w
Sine wave
180°
Average Forward Current, I
-- V
r
IT00622
e
Rectangular wave
θ
360°
360°
1.0 1.2 1.4
IT00624
-- A
O
0.6
I
-- V
100
7 5
3 2
10
7 5
-- mA
3
R
2
1.0 7 5
3 2
0.1
Reverse Current, I
7 5
3 2
0.01 0
R
Ta=125°C
100°C
75°C
50°C
25°C
Reverse Voltage, V
1000
7 5
3
-- pF
2
100
7 5
3 2
10
7 5
3
Interterminal Capacitance, C
2
1.0
1.0 10
2
C -- V
357 2
Reverse Voltage, VR -- V
R
15510
IT00623
R
-- V
R
f=1MHz
IT00625
No.6595-2/3
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