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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Schottky Barrier Diode
90V, 200mA Rectifier
Ordering number:ENN6331
SBE803
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.7V).
· Fast reverse recovery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Specifications
Absolute Maximum Ratings at Ta = 25˚C (Value per element)
Electrical Characteristics at Ta = 25˚C (Value per element)
Marking : SB
Package Dimensions
unit:mm
1294
2.9
12
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititepernoNV
tnerruCtuptuOegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
retemaraPlobmySsnotidnoC
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehT)a-j(htR 011
MRR
MSR
O
MSF
I
R
F
R
rr
Aµ002=09V
R
I
Am002= 7.0V
F
VRV54= 05Aµ
R
IFI=
R
Mounted on a ceramic board (600mm2×0.8mm) ˚C/W
elcyc1,evaweniszH05 5A
zHM1=f,V01=01Fp
[SBE803]
345
1.6 0.60.6
0.40.95
0.2
0.7
0.4
.tiucriCtseTdeificepseeS,Am001= 01sn
0.15
2.8
0.9
nimpytxam
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
SANYO : CPH5
0.05
sgnitaR
0.2
09V
59V
002Am
˚C
˚C
tinU
O0899GI (KT) No.6331–1/3
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SBE803
Electrical Connection trr Specified Test Circuit
543
12
1.0
7
5
3
2
-- A
0.1
F
7
5
3
2
0.01
7
Forward Current, I
5
3
2
0.001
0
0.20
-- W
0.18
(AV)
0.16
F
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0
Average Forward Power Dissipation, P
100°C
°C
Ta=125
⁄Rectangular wave θ=60°
¤Rectangular wave θ=120°
‹Rectangular wave θ=180°
›Sine wave θ=180°
0.05 0.10 0.15
Average Forward Current, I
7
-- A
6
5
(Peak)
FSM
4
1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
I
-- V
F
F
75°C
50°C
25°C
Forward Voltage, V
PF(AV) -- I
0.6 0.8 1.00.2 0.4
-- V
F
O
›
¤
⁄
Rectangular wave
Sine wave
0.20 0.25 0.30
I
S
-- t
O
Current waveform 50Hz sine wave
Is
20ms
-- A
t
‹
180°
360°
θ
360°
IT01112
IT01114
Duty≤10%
50Ω 100Ω 10Ω
10µs
1.0
0.1
-- mA
R
0.01
0.001
Reverse Current, I
0.0001
100
-- pF
Interterminal Capacitance, C
1.0
100mA100mA
5V
I
R
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
10 20 30 40 50 60 70 80 90
0
Ta=125
Reverse Voltage, V
C -- V
7
5
3
2
10
7
5
3
2
357 2357
1.0 10
2
Reverse Voltage, V
100
75°C
50°C
25°C
trr
-- V
°C
°C
R
R
10mA
R
R
-- V
-- V
IT01113
f=1MHz
100
IT01115
3
2
1
Surge Forward Current , I
0
7
0.01
23 7
52 237
0.1
Time, t -- s
5
1.0
3
IT01116
No.6331–2/3