SANYO SBE803 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Schottky Barrier Diode

90V, 200mA Rectifier

Ordering number:ENN6331

SBE803

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Applications

· High frequency rectification (switching regulators,
converters, choppers).

Features

· Low forward voltage (VF max=0.7V).

· Fast reverse recovery time (trr max=10ns).

· Low switching noise.

· Low leakage current and high reliability due to
highly reliable planar structure.

Specifications

Absolute Maximum Ratings at Ta = 25˚C (Value per element)

Electrical Characteristics at Ta = 25˚C (Value per element)

Marking : SB

Package Dimensions

unit:mm

1294

2.9

12

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVesreveRkaePevititepeRV

egatloVegruSesreveRkaePevititepernoNV

tnerruCtuptuOegarevAI

tnerruCdrawroFegruSI

erutarepmeTnoitcnuJjT 521+ot55–

erutarepmeTegarotSgtsT 521+ot55–

retemaraPlobmySsnotidnoC

egatloVesreveRV
egatloVdrawroFV

tnerruCesreveRI

ecnaticapaClanimretretnICV

emiTyrevoceResreveRt

ecnatsiseRlamrehT)a-j(htR 011

MRR
MSR

O

MSF

I

R
F

R

rr

Aµ002=09V

R

I

Am002= 7.0V

F

VRV54= 05Aµ

R

IFI=

R

Mounted on a ceramic board (600mm2×0.8mm) ˚C/W

elcyc1,evaweniszH05 5A

zHM1=f,V01=01Fp

[SBE803]

345

1.6 0.60.6

0.40.95

0.2

0.7

0.4

.tiucriCtseTdeificepseeS,Am001= 01sn

0.15

2.8

0.9

nimpytxam

1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode
SANYO : CPH5

0.05

sgnitaR

0.2

09V
59V
002Am

˚C
˚C

tinU

O0899GI (KT) No.6331–1/3

SBE803

Electrical Connection trr Specified Test Circuit

543

12

1.0
7

5
3

2

-- A

0.1

F

7
5

3
2

0.01
7

Forward Current, I

5
3

2

0.001
0

0.20

-- W

0.18

(AV)

0.16

F

0.14

0.12

0.10

0.08

0.06

0.04

0.02
0

0

Average Forward Power Dissipation, P

100°C

°C

Ta=125

⁄Rectangular wave θ=60°
¤Rectangular wave θ=120°
‹Rectangular wave θ=180°
›Sine wave θ=180°

0.05 0.10 0.15

Average Forward Current, I

7

-- A

6

5

(Peak)

FSM

4

1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode

I

-- V

F

F

75°C

50°C

25°C

Forward Voltage, V

PF(AV) -- I

0.6 0.8 1.00.2 0.4

-- V

F

O

›

¤

⁄

Rectangular wave

Sine wave

0.20 0.25 0.30

I

S

-- t

O

Current waveform 50Hz sine wave

Is

20ms

-- A

t

‹

180°

360°

θ

360°

IT01112

IT01114

Duty≤10%

50Ω 100Ω 10Ω

10µs

1.0

0.1

-- mA
R

0.01

0.001

Reverse Current, I

0.0001

100

-- pF

Interterminal Capacitance, C

1.0

100mA100mA

5V

I

R

7
5

3
2

7
5

3
2

7
5

3
2

7
5

3
2

10 20 30 40 50 60 70 80 90

0

Ta=125

Reverse Voltage, V

C -- V

7
5

3
2

10

7
5

3
2

357 2357

1.0 10

2

Reverse Voltage, V

100

75°C

50°C

25°C

trr

-- V

°C

°C

R

R

10mA

R

R

-- V

-- V

IT01113

f=1MHz

100

IT01115

3

2

1

Surge Forward Current , I

0

7

0.01

23 7

52 237

0.1

Time, t -- s

5

1.0

3

IT01116

No.6331–2/3