SANYO SBE802 Datasheet

Ordering number : ENN6293A

SBE802

Schottky Barrier Diode

SBE802

100V, 400mA Rectifier

Applications

•

High frequency rectification (switching regulators,
converters, and choppers).

Features

•

Low forward voltage (VF max=0.7V).

• Fast reverse recovery time (t

• Low switching noise.

• Low leakage current and high reliability due to highly

reliable planar structure.

max=10ns).

rr

Package Dimensions

unit : mm

1294

2.9

345

12

0.4

[SBE802]

2.8

1.6 0.60.6

0.40.95

0.2

0.9

0.7

0.15

0.2

0.05

1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode

SANYO : CPH5

Specifications

Absolute Maximum Ratings at T a=25°C (Value per element)

Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage V
Nonrepetitive Peak Reverse Surge Voltage V
Average Output Current I
Surge Forward Current I
Junction T emperature Tj --55 to +125 °C
Storage Temperature T stg --55 to +125 °C

RRM
RSM

O

FSM

50Hz sine wave, 1 cycle 5 A

100 V
100 V
400 mA

Electrical Characteristics at Ta=25°C (Value per element)

Parameter Symbol Conditions
Reverse Voltage V
Forward Voltage V
Reverse Current I

Interterminal Capacitance C VR=10V, f=1MHz 20 pF
Reverse Recovery Time t
Thermal Resistance Rth(j-a) Mounted on a ceramic board (600mm

Marking : SA

IR=200µA 100 V

R

IF=200mA 0.5 0.55 V

F

IF=400mA 0.7 V
VR=45V 50 µA

R

IF=IR=100mA, See specified Test Circuit. 10 ns

rr

2

✕0.8mm) 110 °C/W

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72600 GI IM / 80699 GI (KT)

No.6293-1/3

Unit

SBE802

Electrical Connection trr Test Circuit

543

12

1.0
7

5
3

2

-- A

0.1

F

7

100°C

5
3

2

0.01

Ta=125°C

7

Forward Current, I

5
3

2

0.001
0

0.40

qRectangular wave θ=60°

-- W

wRectangular wave θ=120°

0.35

eRectangular wave θ=180°

(AV)

F

rSine wave θ=180°

0.30

0.25

0.20

0.15

0.10

0.05

0

Average Forward Power Dissipation, P

0

0.1 0.2 0.3 0.4

Average Forward Current, I

7

-- A

6

5

(Peak)

FSM

4

I

F

75°C

50°C

25°C

Forward Voltage, V

PF(AV) -- I

q

Sine wave

I

S

Current waveform 50Hz sine wave

1 : Cathode
2 : Cathode
3 : Anode
4 : No Contact
5 : Anode

-- V

F

0.6 0.8 1.00.2 0.4

-- V

F

O

e

r

w

Rectangular wave

180°

360°

0.5 0.6 0.7

-- A

O

-- t

Is

20ms

Duty≤10%

θ

360°

IT01107

IT01109

1.2

50Ω 100Ω 10Ω

10µs

5V

100

7
5
3
2

10

7
5
3
2

1.0

-- mA

7
5

R

3
2

0.1
7
5
3
2

0.01
7
5
3

Reverse Current, I

2

0.001
7
5
3
2

0.0001
0

100

7
5

-- pF

3
2

10

7
5

3
2

Interterminal Capacitance, C

1.0

1.0 10

2

100mA100mA

I

-- V

R

R

Ta=125°C

100°C

75°C

50°C

25°C

Reverse Voltage, V

C -- V

357 2357

-- V

R

R

Reverse Voltage, VR -- V

t

rr

10mA

10010 20 30 40 50 60 70 80 90

IT01108

f=1MHz

100

IT01110

t

3

2

1

Surge Forward Current, I

0

7

0.01

23 7

52 237

0.1

Time, t -- s

5

1.0

3

IT01111

No.6293-2/3