SANYO SBE002 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Schottky Barrier Diode
50V, 1A Rectifier
Ordering number:ENN6343
SBE002
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· High frequency rectification (switching regulators, converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=10ns).
· Low switching noise.
· Low leakage current and high reliability due to highly reliable planar structure.
· Ultrasmall package, permitting SBE002-applied sets to be compact and slim (mounting height 0.9mm).
· Large allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititepernoNV
tnerruCtuptuOegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
egatloVesreveRV egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehTa-jhtR 011
Marking : SD
MRR MSR
O
MSF
I
R
IFA1= 55.0V
F
VRV52= 08Aµ
R
IFI=
rr
Mounted on a ceramic board (600mm2×0.8mm) ˚C/W
Package Dimensions
unit:mm
1295
[SBE002]
2.8
0.9
nimpytxam
0.15
1 : Cathode 2 : Cathode 3 : No Contact 4 : Anode 5 : Cathode 6 : Cathode SANYO : CPH6
0.05
sgnitaR
0.2
05V 55V 1A
˚C ˚C
tinU
2.9
5
6
1
elcyc1,evaweniszH05 01A
Aµ003=05V
R
R
R
zHM1=f,V01=25Fp
4
1.6 0.60.6
23
0.95
0.7 0.2
0.4
.tiucriCtseTdeificepseeS,Am001= 01sn
O0899GI (KT) No.6343–1/3
trr Specified Test Circuit
Duty10%
SBE002
50 100 10
10µs
10
7 5
3
-- A
2
F
1.0 7
5 3
2
Forward Current, I
0.1 7
5
0
1.4
Rectangular wave θ=60°
-- W
¤Rectangular wave θ=120°
1.2
(AV)
Rectangular wave θ=180°
F
Sine wave θ=180°
1.0
Rectangular wave
0.8
0.6
5V
I
-- V
F
°C
Ta=125
Forward Voltage, V
0.6 0.8 1.00.2 0.4
PF(AV) -- I
θ
360°
⁄
F
25°C
100mA100mA
-- V
F
O
trr
IT00608
1.2
10mA
10
5 3
2
1.0 5
-- mA
3
R
2
0.1 5
3 2
0.01 5
Reverse Current, I
3 2
0.001 5
0
I
-- V
R
°C
Ta=125
°C
100
75°C
50°C
25°C
Reverse Voltage, V
C -- V
R
R
6010 20 30 40 50
R
-- V
IT00609
f=1MHz
3
-- pF
2
¤
›
‹
100
7 5
0.4
0.2
0
0
Average Forward Power Dissipation, P
14
-- A
12
10
(Peak)
FSM
Surge Forward Current , I
0.2
8
6
4
2
0
7
0.01
23 7
Sine wave
0.4 0.6 0.8 1.41.21.0
Average Forward Current, I
I
-- t
S
Current waveform 50Hz sine wave
I
S
52 2337
0.1
Time, t -- s
O
5
180°
-- A
20ms
t
360°
1.0
IT00610
IT00612
3
2
Interterminal Capacitance, C
10
1.0 10
2
5572357
3
Reverse Voltage, V
R
-- V
100
IT00611
No.6343–2/3
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