SANYO SBE001 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
Schottky Barrier Diode
30V, 2A Rectifier
Ordering number:ENN6292
SBE001
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Applications
· High frequency rectification (switching regulators, converters, choppers).
Features
· Low forward voltage (VF max=0.55V).
· Fast reverse recovery time (trr max=20ns).
· Low switching noise.
· Low leakage current and high reliability due to highly reliable planar structure.
· Ultrasmall-sized package, permitting SBE001­applied sets to be compact and slim (0.9mm).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititepernoNV
tnerruCtuptuOegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnotidnoC
egatloVesreveRV egatloVdrawroFV
tnerruCesreveRI
ecnaticapaClanimretretnICV
emiTyrevoceResreveRt
ecnatsiseRlamrehT)a-j(htR 011
Marking : SA
MRR MSR
O
MSF
R F
R
rr
Package Dimensions
unit:mm
1295
[SBE001]
2.8
0.9
nimpytxam
0.15
1 : Cathode 2 : Cathode 3 : No Contact 4 : Anode 5 : Cathode 6 : Cathode SANYO : CPH6
0.05
sgnitaR
0.2
03V 53V 2A
˚C ˚C
tinU
2.9
5
6
1
elcyc1,evaweniszH05 02A
I
Aµ005=03V
R
IFA2= 55.0V VRV51= 001Aµ
R
IFI=
R
Mounted on a ceramic board (600mm2×0.8mm) ˚C/W
zHM1=f,V01=07Fp
4
1.6 0.60.6
23
0.95
0.7 0.2
0.4
.tiucriCtseTdeificepseeS,Am001= 02sn
80699GI (KT) No.6292–1/3
trr T est Circuit
Duty≤10%
SBE001
50 100 10
10µs
10
7 5
3
-- A
2
F
1.0 7
5 3
2
Forward Current, I
0.1 7
5
0
2.5
Rectangular wave θ=60°
-- W
¤Rectangular wave θ=120°Rectangular wave θ=180°
(AV)
2.0
F
Sine wave θ=180°
1.5
1.0
0.5
0
0
Average Forward Power Dissipation, P
0.5
Average Forward Current, I
24
-- A
20
(Peak)
16
FSM
12
5V
I
-- V
F
F
°C
Ta=125
°C
25
Forward Voltage, V
0.6 0.8 1.00.2 0.4
PF(AV) -- I
F
O
-- V
›
¤
⁄
Sine wave
180°
1.0 1.5 2.0 3.02.5
I
S
360°
-- t
Current waveform 50Hz sine wave
I
S
100mA100mA
IT00617
‹
Rectangular wave
θ
360°
IT00619
-- A
O
20ms
t
10mA
trr
I
-- V
1.2
--1 0 5
3 2
--1 .0 5
-- mA
3
R
2
--0 .1 5
3 2
--0.01 5
Reverse Current, I
3 2
--0.001 5
0
R
Ta=125
Reverse Voltage, V
C -- V
°C
100°C
75°C
50°C
25°C
R
--3 5--5 --10 --15 --20 --25 --30
IT00618
R
-- V
R
f=1MHz
3
-- pF
2
100
7 5
3
2
Interterminal Capacitance, C
10
--1.0 --10
2
3
Reverse Voltage, V
5572357
-- V
R
--100
IT00620
8
4
Surge Forward Current , I
0
7
0.01
23 7
52 237
0.1
Time, t -- s
5
1.0
3
IT00621
No.6292–2/3
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