Sanyo SB160-18 Specifications
Ordering number :EN2581A
SB160-18
Schottky Barrier Diode (Twin Type · Cathode Common)
180V, 16A Rectifier
Applications
· High frequency rectification (switching regulators,
converters, choppers).
Features
· Low forward voltage (VF max=0.85V).
· Fast reverse recovery time (trr max=60ns).
· Low switching noise.
· Low leakage current and high reliability due to
highly reliable planar structure.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesreveRkaePevititepeRV
egatloVegruSesreveRkaePevititepernoNV
tnerruCtuptuOegarevAI
tnerruCdrawroFegruSI
erutarepmeTnoitcnuJjT 521+ot55–
erutarepmeTegarotSgtsT 521+ot55–
MRR
MSR
O
MSF
Package Dimensions
unit:mm
1160
50Hz, resistive load, Tc=98˚C
elcyc1,evaweniszH05 041A
[SB160-18]
A:Anode
C:Cathode
A:Anode
SANYO:TO-3PB
081–V
091–V
61A
˚C
˚C
Electrical Characteristics
retemaraPlobmySsnoitidnoC
egatloVesreveRV
egatloVdrawroFV
tnerruCesreveRI
emiTyrevoceResreveRrrt 06sn
ecnatsiseRlamrehTc-jhtRCDdehtoomS:esaC-noitcnuJ 0.1
IR=–6mA, Tj=25˚C*
R
IF=6A, Tj=25˚C*
F
VR=–90V, Tj=25˚C*
R
IF=2A, Tj=25˚C*, –dIF/dt=10A/µs
nimpytxam
081–V
Note)*:Value per element
Electrical Connection
A:Anode
C:Cathode
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
33098HA (KT)/5248TA, TS No.2581-1/3
sgnitaR
tinU
58.0V
2.1–Am
˚C/W
SB160-18
No.2581-2/3
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