SANYO MCH5702 Datasheet

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN7076

MCH5702

TR : NPN Epitaxial Planar Silicon Transistor

SBD : Schottky Barrier Diode

MCH5702

DC / DC Converter Applications

Features

•

Composite type with an NPN transistor and a Schottky
barrier diode contained in one package facilitating
high-density mounting.

• The MCH5702 consists of two chips which are

equivalent to the MCH6201 and the SBS006,
respectively.

• Ultrasmall package (0.85mm high when mounted)

facilitates miniaturization in end products.

Specifications

Package Dimensions

unit : mm

2200

[MCH5702]

0.250.25

4

2.1

1.6

0.65

0.3

5

132

0.07

2.0

54

0.85

123

0.15

1 : Base
2 : Emitter
3 : Anode
4 : Cathode
5 : Collector

SANYO : MCPH5

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
[TR]
Collector-to-Base Voltage V
Collector-to-Emitter Voltage V
Emitter-to-Base Voltage V
Collector Current I
Collector Current (Pulse) I
Base Current I
Collector Dissipation P
Junction T emperature Tj 150 °C
Storage T emperature T stg --55 to +125 °C
[SBD]
Repetitive Peak Reverse Voltage V
Non-repetitive Peak Reverse Surge Voltage
Average Recified Current I
Surge Current I
Junction T emperature Tj --55 to +125 °C
Storage T emperature T stg --55 to +125 °C

Marking : PC

V

CBO
CEO
EBO

C

CP

B

C

RRM
RSM

O

FSM

Mounted on a ceramic board (600mm2✕0.8mm) 0.7 W

50Hz sine wave, 1cycle 10 A

15 V
15 V

5V

1.5 A
3A

300 mA

30 V
30 V

0.7 A

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N1501 TS IM TA-3391

GI IM

No.7076-1/5

Electrical Characteristics at Ta=25°C

MCH5702

Parameter Symbol Conditions

[TR]
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain-Bandwidth Product f
Output Capacitance Cob VCB=10V , f=1MHz 9 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=750mA, IB=15mA 130 200 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=750mA, IB=15mA 0.85 1.2 V
Collector-to-Base Breakdown Voltage V
Collector-to-Emitter Breakdown Voltage V
Emitter-to-Base Breakdown Voltage V
Turn-ON Time t
Storage Time t
Fall Time t
[SBD]
Reverse Voltage V

Forward Voltage VF2I

Reverse Current I
Interterminal Capacitance C VR=10V, f=1MHz 20 pF
Reverse Recovery Time t

CBO
EBO

FE

(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

on

stg

VF1I

VF3I

VCB=12V, IE=0 0.1 µA
VEB=4V, IC=0 0.1 µA
VCE=2V, IC=100mA 200 560
VCE=2V, IC=300mA 450 MHz

T

=10µA, IE=0 15 V
=1mA, RBE=∞ 15 V

=10µA, IC=0 5 V
See specified Test Circuit. 40 ns
See specified Test Circuit. 180 ns
See specified Test Circuit. 20 ns

f

IR=0.5mA 30 V

R

R

rr

=0.3A 0.35 0.40 V

F

=0.5A 0.42 0.47 V

F

=0.7A 0.5 0.55 V

F

VR=10V 200 µA

IF=IR=100mA, See specified Test Circuit 10 ns

Ratings

min typ max

Electrical Connection

Unit

54

(Top view)

123

Switching Time Test Circuit trr Test Circuit

[TR] [SBD]

PW=20µs
D.C.≤1%

INPUT

50Ω

IC=20IB1= --20IB2=750mA

V

R

I

B2

I

B1

R

B

++

220µF 470µF

VCC=5VVBE= --5V

OUTPUT

R

L

Duty≤10%

50Ω 100Ω 10Ω

10µs

--5V

100mA100mA

10mA

t

rr

No.7076-2/5