SANYO MCH3412 Datasheet

Ordering number : ENN6901

MCH3412

N-Channel Silicon MOSFET

MCH3412

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resinstance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2167

[MCH3412]

0.3

3

12

0.65

2.0

0.250.25

1.6

2.1

0.15

1 : Gate

0.85

0.15

2 : Source
3 : Drain

SANYO : MCPH3

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +125 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 12 A
Mounted on a ceramic board (900mm2✕0.8mm) 1 W

30 V

±20 V

3A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=1.5A 2.1 3 S

min typ max

Marking : KM Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

13001 TS IM TA-3099

No.6901-1/4

MCH3412

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 180 pF

Output Capacitance Coss VDS=10V , f=1MHz 42 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 18.5 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=3A 4.9 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=3A 0.93 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3A 0.63 nC
Diode Forward Voltage V

RDS(on)1 ID=1.5A, VGS=10V 64 84 mΩ
RDS(on)2 ID=1A, VGS=-4V 105 150 mΩ

See specified Test Circuit 2.8 ns

r

See specified Test Circuit 4.4 ns

f

SD

IS=3A, VGS=0 0.85 1.2 V

min typ max

Ratings

Unit

Switching Time Test Circuit

V

IN

10V

0V

V

IN

PW=10µs
D.C.≤1%

P.G

4.0

3.6

3.2

2.8

-- A
D

Drain Current, I

2.4

2.0

1.6

1.2

0.8

0.4

250

8.0V

10.0V

0

0

5.0V

6.0V

0.2

G

50Ω

I

-- V

D

4.0V

3.0V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source V oltage, V

RDS(on) -- V

VDD=15V

RL=10Ω

D

S

DS

GS

ID=1.5A

MCH3412

V

-- V

DS

V

GS

OUT

=2.5V

IT02942

Ta=25°C

I

-- V

4.0

3.5

3.0

-- A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

0

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

D

Gate-to-Source V oltage, V

250

RDS(on) -- Ta

Ta=75°C

GS

--25°C

25°C

GS

-- V

VDS=10V

IT02943

200

(on) -- mΩ

DS

150

1.0A

ID=1.5A

100

50

Static Drain-to-Source

On-State Resistance, R

0

02468101214161820

Gate-to-Source V oltage, V

GS

-- V

IT02944

200

(on) -- mΩ

150

DS

=1.0A, V

I

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

D

=1.5A, V

I

D

GS

GS

=4V

=10V

Ambient Temperature, Ta -- °C

IT02945

No.6901-2/4