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Ordering number : ENN6901
MCH3412
N-Channel Silicon MOSFET
MCH3412
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resinstance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2167
[MCH3412]
0.3
3
12
0.65
2.0
0.250.25
1.6
2.1
0.15
1 : Gate
0.85
0.15
2 : Source
3 : Drain
SANYO : MCPH3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +125 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 12 A
Mounted on a ceramic board (900mm2✕0.8mm) 1 W
30 V
±20 V
3A
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=10V, ID=1.5A 2.1 3 S
min typ max
Marking : KM Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13001 TS IM TA-3099
No.6901-1/4
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MCH3412
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 180 pF
Output Capacitance Coss VDS=10V , f=1MHz 42 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 18.5 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=3A 4.9 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=3A 0.93 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=3A 0.63 nC
Diode Forward Voltage V
RDS(on)1 ID=1.5A, VGS=10V 64 84 mΩ
RDS(on)2 ID=1A, VGS=-4V 105 150 mΩ
See specified Test Circuit 2.8 ns
r
See specified Test Circuit 4.4 ns
f
SD
IS=3A, VGS=0 0.85 1.2 V
min typ max
Ratings
Unit
Switching Time Test Circuit
V
IN
10V
0V
V
IN
PW=10µs
D.C.≤1%
P.G
4.0
3.6
3.2
2.8
-- A
D
Drain Current, I
2.4
2.0
1.6
1.2
0.8
0.4
250
8.0V
10.0V
0
0
5.0V
6.0V
0.2
G
50Ω
I
-- V
D
4.0V
3.0V
0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9
Drain-to-Source V oltage, V
RDS(on) -- V
VDD=15V
RL=10Ω
D
S
DS
GS
ID=1.5A
MCH3412
V
-- V
DS
V
GS
OUT
=2.5V
IT02942
Ta=25°C
I
-- V
4.0
3.5
3.0
-- A
2.5
D
2.0
1.5
Drain Current, I
1.0
0.5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
D
Gate-to-Source V oltage, V
250
RDS(on) -- Ta
Ta=75°C
GS
--25°C
25°C
GS
-- V
VDS=10V
IT02943
200
(on) -- mΩ
DS
150
1.0A
ID=1.5A
100
50
Static Drain-to-Source
On-State Resistance, R
0
02468101214161820
Gate-to-Source V oltage, V
GS
-- V
IT02944
200
(on) -- mΩ
150
DS
=1.0A, V
I
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
D
=1.5A, V
I
D
GS
GS
=4V
=10V
Ambient Temperature, Ta -- °C
IT02945
No.6901-2/4