SANYO MCH3410 Datasheet

Ordering number : ENN6864

MCH3410

N-Channel Silicon MOSFET

MCH3410

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2167

[MCH3410]

0.3

3

12

0.65

2.0

0.250.25

1.6

2.1

0.15

1 : Gate

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 8.0 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.9 W

0.85

0.15

2 : Source
3 : Drain

SANYO : MCPH3

30 V

±20 V

2.0 A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=10V , f=1MHz 120 pF

Output Capacitance Coss VDS=10V , f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 15 pF

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1A, VGS=10V 115 150 mΩ
RDS(on)2 ID=0.5A, VGS=4V 190 270 mΩ

=1mA, VGS=0 30 V
VDS=30V , VGS=0 1 µA
VGS=±16V, VDS=0 ±10 µA

VDS=10V, ID=1A 1.4 2.0 S

min typ max

Marking : KK Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

13001 TS IM TA-3061

No.6864-1/4

MCH3410

Continued from preceding page.

Parameter Symbol Conditions

Turn-ON Delay Time td(on) See specified Test Circuit 6 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 17 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=10V, ID=2.0A 3.6 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=2.0A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=2.0A 0.5 nC
Diode Forward Voltage V

SD

See specified Test Circuit 4 ns

r

See specified Test Circuit 5 ns

f

IS=2.0A, VGS=0 0.88 1.2 V

min typ max

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

ID=1A
RL=15Ω

D

V

OUT

Ratings

Unit

P.G

3.0

5V

2.5

6V

8V

2.0

-- A
D

1.5

1.0

10V

Drain Current, I

0.5

0

0

0.2

Drain-to-Source V oltage, V

400

350

300

(on) -- mΩ

250

DS

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

ID=0.5A

0

0123456

RDS(on) -- V

Gate-to-Source V oltage, V

MCH3410

S

I

50Ω

D

-- V

DS

4V

=3V

V

GS

0.4 0.6 0.8 1.0

IT02709

-- V

DS

GS

Ta=25°C

1.0A

78910

IT02711

-- V

GS

I

-- V

-- A

3.0

VDS=10V

2.5

2.0

D

GS

D

1.5

1.0

Drain Current, I

0.5

0

0 0.5 1.0 1.5 2.0 4.03.53.02.5

Gate-to-Source V oltage, V

300

250

(on) -- mΩ

200

DS

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

=0.5A, V

I

D

=1.0A, V

I

D

GS

Ta=75°C

=4V

GS

--25°C

GS

=10V

Ambient Temperature, Ta -- °C

25°C

-- V

No.6864-2/4

IT02710

IT02712