SANYO MCH3409 Datasheet

Ordering number : ENN6911

Preliminary

MCH3409

N-Channel Silicon MOSFET

MCH3409

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 8.0 A
Mounted on a ceramic board (900mm2✕0.8mm) 0.9 W

Package Dimensions

unit : mm

2167

[MCH3409]

0.3

3

12

0.65

2.0

0.250.25

1.6

0.15

2.1

0.85

0.15

1 : Gate
2 : Source
3 : Drain

SANYO : MCPH3

20 V

±10 V

2.0 A

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1A, VGS=4V 100 130 mΩ
RDS(on)2 ID=0.5A, VGS=2.5V 130 180 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µA
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=1A 2.4 3.5 S

min typ max

Marking : KJ Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

11801 TS IM TA-3049

No.6911-1/4

MCH3409

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 190 pF
Output Capacitance Coss VDS=10V , f=1MHz 40 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 25 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=2.0A 2.7 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=2.0A 0.6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=2.0A 0.6 nC
Diode Forward Voltage V

SD

See specified Test Circuit 25 ns

r

See specified Test Circuit 18 ns

f

IS=2.0A, VGS=0 0.87 1.2 V

min typ max

Switching Time Test Circuit

VDD=10V

V

IN
4V
0V

PW=10µs
D.C.≤1%

V

IN

G

ID=1A
RL=10Ω

D

V

OUT

Ratings

Unit

2.0

1.8

3.0V

1.6

4.0V

1.4

-- A
D

1.2

6.0V

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

0

300

P.G

I

50Ω

D

-- V

2.0V

2.5V

0.2

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

Drain-to-Source V oltage, V

RDS(on) -- V

DS

DS

GS

S

V

GS

-- V

MCH3409

=1.5V

Ta=25°C

IT02720

I

-- V

-- A

3.0

VDS=10V

2.5

2.0

D

GS

D

1.5

1.0

Drain Current, I

0.5

Ta=75°C

0

0 0.4 0.8 1.2 1.6 2.0

Gate-to-Source V oltage, V

250

RDS(on) -- Ta

--25°C

GS

25°C

-- V

IT02721

250

200

(on) -- mΩ

DS

150

ID=0.5A

100

50

Static Drain-to-Source

On-State Resistance, R

0

0123456

1.0A

Gate-to-Source V oltage, V

78910

IT02722

-- V

GS

200

(on) -- mΩ

DS

150

=0.5A, V

I

D

=1.0A, V

I

100

50

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

D

GS

=2.5V

GS

=4.0V

Ambient Temperature, Ta -- °C

IT02723

No.6911-2/4