SANYO MCH3406 Datasheet

Ordering number : ENN7010

MCH3406

N-Channel Silicon MOSFET

MCH3406

Ultrahigh-Speed Switching Applications

Features

•

Low ON-state resistance.

• Ultrahigh-speed switching.

•

1.8V drive.

Package Dimensions

unit : mm

2167A

[MCH3406]

0.65

2.0

0.3

3

12

0.07

2.1

0.250.25

1.6

0.15

3

1 : Gate
2 : Source
3 : Drain

Specifications

0.85

12

SANYO : MCPH3

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 12 A
Mounted on a ceramic board (900mm2✕0.8mm) 1 W

20 V

±10 V

3A

Electrical Characteristics at T a=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.4 1.3 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=1.5A, VGS=4V 48 63 mΩ
RDS(on)2 ID=1A, VGS=2.5V 58 82 mΩ
RDS(on)3 ID=0.5A, VGS=1.8V 72 110 mΩ

=1mA, VGS=0 20 V
VDS=20V , VGS=0 1 µ A
VGS=±8V, VDS=0 ±10 µA

VDS=10V, ID=1.5A 3.9 5.6 S

Marking : KF Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

min typ max

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71801 TS IM TA-3097

No.7010-1/4

MCH3406

Continued from preceding page.

Parameter Symbol Conditions

Input Capacitance Ciss VDS=10V , f=1MHz 280 pF
Output Capacitance Coss VDS=10V , f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=10V , f=1MHz 38 pF
Turn-ON Delay Time td(on) See specified Test Circuit 13 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 35 ns
Fall Time t
Total Gate Charge Qg VDS=10V, VGS=4V, ID=3A 8.8 nC
Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=3A 0.85 nC
Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A 0.85 nC
Diode Forward Voltage V

SD

See specified Test Circuit 35 ns

r

See specified Test Circuit 25 ns

f

IS=3A, VGS=0 0.82 1.2 V

Switching Time Test Circuit

V
4V
0V

PW=10µs
D.C .≤1%

IN

V

IN

VDD=10V

ID=1.5A
RL=6.67Ω

D

G

V

OUT

Ratings

min typ max

Unit

MCH3406

S

3.0

2.5

2.5V

P.G

1.8V

1.5V

I

D

50Ω

-- V

DS

4.0V

-- A

2.0

D

10.0V

1.5

1.0

V

GS

Drain Current, I

0.5

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Drain-to-Source V oltage, V

160

140

120

(on) -- mΩ

100

DS

80

I

=0.5A

D

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

0246810

RDS(on) -- V

1.0A

1.5A

Gate-to-Source V oltage, V

DS

GS

GS

-- V

Ta=25°C

-- V

=1.0V

IT03490

IT03492

I

-- V

4.0

VDS=10V

3.5

3.0

-- A

2.5

D

2.0

1.5

Drain Current, I

1.0

0.5

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

D

Gate-to-Source V oltage, V

140

120

100

(on) -- mΩ

DS

80

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0 20 40 60 80 100 120 140 160

RDS(on) -- Ta

=0.5A, V

I

D

=1.0A, V

I

D

=1.5A, V

I

D

Ta=75°C

GS

GS

GS

- -25°C

25°C

=1.8V

GS

GS

=2.5V

=4.0V

Ambient Temperature, Ta -- °C

-- V

No.7010-2/4

IT03491

IT03493