SANYO MCH3402 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6444

MCH3402

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed swithcing.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : KB Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %16.5A

PD

Mounted on a ceramic board (900mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01=

1)no(IDV,Am007=

2)no(IDV,Am004=
SD

SD
SD

Package Dimensions

unit:mm

2167

[MCH3402]

0.3

3

12

0.65

2.0

V,Am1=

0=03V

SG

V,V03=

0=01Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1=0.14.2V

D

Am007=1.16.1S

D

V01=022082mΩ

SG

V4=043084mΩ

SG

zHM1=f,V01=09Fp
zHM1=f,V01=05Fp
zHM1=f,V01=22Fp

0.250.25

1.6

0.15

0.15

2.1

0.85

nimpytxam

1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3

03V
02±V

4.1A

1W

˚C
˚C

sgnitaR

tinU

30300TS (KOTO) TA-2456 No.6444-1/4

MCH3402

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

Switching Time Test Circuit

VDD=15V

V

IN

10V

0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=700mA

RL=21.4Ω

)no(tiucriCtseTdeificepseeS01sn

d

r

)ffo(tiucriCtseTdeificepseeS92sn

d

f

SG
SG
SG

V,A4.1=

0=9.02.1V

SG

V

OUT

I

DS

S

tiucriCtseTdeificepseeS31sn

tiucriCtseTdeificepseeS51sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A4.1=5Cn
A4.1=1Cn
A4.1=1Cn

tinU

P.G

1.4

1.2

1.0

–A

D

0.8

0.6

0.4

Drain Current, I

0.2

0

0

800

700

600

–mΩ

(on)

500

DS

400

ID=0.4A

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

0 2 4 6 8 10 12

50Ω

8.0V

10.0V

0.2

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

0.7A

Gate-to-Source Voltage, V

S

I

D

6.0V

-- V

4.0V

MCH3402

DS

3.5V

3.0V

VGS=2.5V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

GS

Ta=25°C

14 16 18 20

–V

GS

IT01610

IT01612

3.0

VDS=10V

2.5

–A

2.0

D

1.5

1.0

Drain Current, I

0.5

0

0 0.5 1.0

600

500

–mΩ

400

(on)

DS

300

200

100

Static Drain-to-Source

On-State Resistance, R

0

- -60

Gate-to-Source Voltage, VGS–V

--40 --20 0 20 40 60 80 100 120 160140

I

-- V

D

GS

Ta=--25

25°C

2.0

1.5

2.5 3.0

RDS(on) -- Ta

=4V

GS

=0.4A, V

I

D

=0.7A, V

I

D

Ambient Temperature, Ta – ˚C

GS

=10V

3.5

°C

75°C

4.54.0

IT01611

IT01613

No.6444-2/4