SANYO MCH3401 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6443

MCH3401

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed swithcing.

· 2.5V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : KA Continued on next page.

SSD
SSG

D

SG

R

SD

R

SD

WP ≤ elcycytud,sµ01 ≤ %16.5A

PD

Mounted on a ceramic board (900mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

SD

V

SG

)ffo(VSDI,V01=

1)no(IDV,Am007=

2)no(IDV,Am004=
SD

SD
SD

Package Dimensions

unit:mm

2167

[MCH3401]

0.3

3

12

0.65

2.0

V,Am1=

0=03V

SG

V,V03=

0=01Aµ

SG

V,V8±=

0=01±Aµ

SD

Am1=4.03.1V

D

Am007=6.13.2S

D

V4=052523mΩ

SG

V5.2=013534mΩ

SG

zHM1=f,V01=09Fp
zHM1=f,V01=05Fp
zHM1=f,V01=02Fp

0.250.25

1.6

0.15

0.15

2.1

0.85

nimpytxam

1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3

03V
01±V

4.1A

1W

˚C
˚C

sgnitaR

tinU

30300TS (KOTO) TA-2455 No.6443-1/4

MCH3401

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01=

egrahCecruoS-ot-etaGsgQVSDV,V01=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01=

egatloVdrawroFedoiDV

Switching Time Test Circuit

VDD=15V

V

IN

4V
0V

PW=10µs
D.C.≤1%

V

IN

G

D

ID=700mA

RL=21.4Ω

)no(tiucriCtseTdeificepseeS01sn

d

r

)ffo(tiucriCtseTdeificepseeS82sn

d

f

SG
SG
SG

V,A4.1=

0=9.02.1V

SG

V

OUT

I

DS

S

tiucriCtseTdeificepseeS31sn

tiucriCtseTdeificepseeS02sn

I,V01=

D

I,V01=

D

I,V01=

D

sgnitaR

nimpytxam

A4.1=6Cn
A4.1=1Cn
A4.1=2Cn

tinU

P.G

1.4

1.2

50Ω

4.0V

6.0V

1.0

–A

D

0.8

0.6

0.4

Drain Current, I

0.2

0

0

8.0V

0.2

Drain-to-Source Voltage, VDS–V

500

450

400

–mΩ

350

ID=0.4A

(on)

300

DS

250

200

150

100

50

Static Drain-to-Source

On-State Resistance, R

0

0123456

RDS(on) -- V

0.7A

Gate-to-Source Voltage, V

MCH3401

S

I

-- V

D

3.0V

2.5V

DS

2.0V

VGS=1.5V

0.4 0.6 0.8 1.00.1 0.3 0.5 0.7 0.9

GS

Ta=25°C

78910

–V

GS

IT01599

IT01601

I

-- V

2.0

VDS=10V

1.8

1.6

1.4

–A

D

1.2

1.0

0.8

0.6

Drain Current, I

0.4

0.2
0

0 0.5 1.0 1.5 2.0 2.5

D

Ta=75°C

GS

°C

--25

25°C

Gate-to-Source Voltage, VGS–V

500

450

400

–mΩ

350

(on)
DS

300

250

200

150

Static Drain-to-Source

On-State Resistance, R

100

- -40

- -60

- -20

RDS(on) -- Ta

GS

=0.4A, V

I

D

=0.7A, V

I

D

0

20 40 60

=2.5V

GS

=4.0V

80

Ambient Temperature, Ta – ˚C

IT01600

100 120 160140

IT01602

No.6443-2/4