Sanyo MCH3319 Specifications
Ordering number : ENN7199
MCH3319
P-Channel Silicon MOSFET
MCH3319
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 1.8V drive.
Package Dimensions
unit : mm
2167A
[MCH3319]
0.3
3
0.65
2.0
(Bottom view)
12
0.07
2.1
0.250.25
1.6
0.15
3
1 : Gate
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --10.4 A
Mounted on a ceramic board (900mm2✕0.8mm) 1.0 W
0.85
12
(Top view)
2 : Source
3 : Drain
SANYO : MCPH3
--12 V
±8V
--2.6 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.3 --1.0 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--1.3A, VGS=--4.5V 75 98 mΩ
RDS(on)2 ID=--0.7A, VGS=--2.5V 110 155 mΩ
RDS(on)3 ID=--0.3A, VGS=--1.8V 150 255 mΩ
=--1mA, VGS=0 --12 V
VDS=--12V, VGS=0 --10 µA
VGS=±6.4V, VDS=0 ±10 µA
VDS=--6V, ID=--1.3A 2.9 4.2 S
min typ max
Marking : JU Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41002 TS IM TA-3486
No.7199-1/4
MCH3319
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--6V, f=1MHz 450 pF
Output Capacitance Coss VDS=--6V, f=1MHz 100 pF
Reverse Transfer Capacitance Crss VDS=--6V, f=1MHz 85 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 65 ns
Fall Time t
Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--2.6A 6.5 nC
Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--2.6A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--2.6A 2.0 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 70 ns
r
See specified Test Circuit. 50 ns
f
IS=--2.6A, VGS=0 --0.87 --1.5 V
Switching Time Test Circuit
0V
--4.5V
V
IN
PW=10µs
D.C.≤1%
V
IN
VDD= --6V
ID= --1.3A
RL=4.6Ω
D
G
V
OUT
Ratings
min typ max
Unit
--3.0
--2.5
--2.0
-- A
D
--1.5
--1.0
Drain Current, I
--0.5
0
0 --0.1
250
200
P.G
--3.5V
I
D
--3.0V
50Ω
-- V
DS
--2.5V
--4.5V
Drain-to-Source V oltage, VDS -- V
--0.2 --0.3 --0.4 --0.5
RDS(on) -- V
GS
MCH3319
S
--1.8V
--1.5V
VGS= --1.0V
Ta=25°C
IT04325
--3.0
VDS= --6V
--2.5
--2.0
-- A
D
--1.5
--1.0
Drain Current, I
--0.5
D
GS
Ta=75
°C
°C
--25
I
-- V
25°C
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8
Gate-to-Source V oltage, VGS -- V
300
250
RDS(on) -- Ta
IT04326
(on) -- mΩ
DS
150
ID= --0.7A
100
50
Static Drain-to-Source
On-State Resistance, R
0
0 --1 --2 --3 --4 --5 --6 --7 --8
--1.3A
Gate-to-Source V oltage, VGS -- V
IT04327
(on) -- mΩ
200
DS
= --0.3A, V
I
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
D
= --0.7A, V
I
D
= --1.3A, V
I
D
GS
GS
GS
= --1.8V
= --2.5V
= --4.5V
Ambient Temperature, Ta -- °C
IT04328
No.7199-2/4
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