SANYO MCH3312 Datasheet
Ordering number : ENN7009
MCH3312
P-Channel Silicon MOSFET
MCH3312
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2167A
[MCH3312]
0.65
2.0
0.3
3
12
0.07
2.1
0.250.25
1.6
0.15
3
1 : Gate
2 : Source
3 : Drain
Specifications
0.85
12
SANYO : MCPH3
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --8 A
Mounted on a ceramic board (900mm2✕0.8mm)
--30 V
±20 V
--2 A
1W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--1A, VGS=--10V 110 145 mΩ
RDS(on)2 ID=--0.5A, VGS=--4V 205 290 mΩ
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--1A 1.4 2.0 S
Marking : JM Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71801 TS IM TA-3098
No.7009-1/4
MCH3312
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 200 pF
Output Capacitance Coss VDS=--10V, f=1MHz 47 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 32 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7.2 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 21 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2A 5.5 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2A 0.98 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--2A 0.82 nC
Diode Forward Voltage V
SD
See specified Test Circuit 2.9 ns
r
See specified Test Circuit 8.7 ns
f
IS=--2A, VGS=0 --0.85 --1.5 V
Switching Time Test Circuit
G
VDD= --15V
ID= --1A
RL=15Ω
D
V
OUT
0V
--10V
PW=10µs
D.C.≤1%
V
IN
V
IN
Ratings
min typ max
Unit
--2.0
--1.6
-- A
D
--1.2
--0.8
Drain Current, I
--0.4
0
0
400
350
P.G
--10.0V
--6.0V
I
D
--4.0V
50Ω
-- V
DS
--3.5V
--0.2
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
Drain-to-Source V oltage, V
RDS(on) -- V
GS
DS
S
-- V
V
GS
MCH3312
= --3.0V
IT03223
Ta=25°C
I
-- V
--5.0
VDS= --10V
--4.5
--4.0
--3.5
-- A
D
--3.0
--2.5
--2.0
--1.5
Drain Current, I
--1.0
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5
D
Gate-to-Source V oltage, V
400
350
RDS(on) -- Ta
GS
Ta=75°C
--25°C
25°C
GS
-- V
IT03224
300
(on) -- mΩ
250
DS
200
--1.0A
ID= --0.5A
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --12 --14 --16--10 --18 --20
Gate-to-Source V oltage, V
GS
-- V
IT03225
300
(on) -- mΩ
250
DS
200
150
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
= --0.5A, V
I
D
= --1.0A, V
I
D
GS
GS
= --4V
= --10V
Ambient Temperature, Ta -- °C
IT03226
No.7009-2/4
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